1200 V SiC BJTs with Low VCESAT and High Temperature Capability

Martin Domeij; Anders Lindgren; Carina Zaring; Andrei O. Konstantinov; Krister Gumaelius; Hakan Grenell; Imre Keri; Jan Olov Svedberg; Mats Reimark

doi:10.4028/www.scientific.net/MSF.679-680.686

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HomeMaterials Science ForumMaterials Science Forum Vols. 679-6801200 V SiC BJTs with Low VCESAT and High...

1200 V SiC BJTs with Low V_CESAT and High Temperature Capability

Abstract:

Vertical epitaxial NPN SiC BJTs for 1200 V rating were fabricated. Very low collector-emitter saturation voltages VCESAT=0.5 V at IC=6 A (JC=140 A/cm2) and T=25 °C and VCESAT=1.0 V at IC=6 A and T=250 °C were measured. The common emitter current gain at IC=6 A is 71 at T=25 °C and 32 at T=250 °C, respectively. A SPICE model was developed for the BJT including the parasitic capacitances of the internal pn junctions, as well as temperature dependence of the current gain and the collector series resistance. The IC-VCE characteristics of the BJT are in good agreement with the SPICE model between 25 °C and 250 °C. Fast switching measurements were performed showing a VCE voltage fall-time of 22 ns and a VCE voltage rise-time of 11 ns.

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Materials Science Forum (Volumes 679-680)

Pages:

686-689

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.679-680.686

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Online since:

March 2011

Authors:

Martin Domeij, Anders Lindgren, Carina Zaring, Andrei O. Konstantinov, Krister Gumaelius, Hakan Grenell, Imre Keri, Jan Olov Svedberg, Mats Reimark

Keywords:

Bipolar Transistor, Saturation Voltage, Spice Model, Switching

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References

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