Reverse Electrical Characteristics of 4H-SiC JBS Diodes Fabricated on In-House Substrate with Low Threading Dislocation Density

Fujiwara Hirokazu; Masaki Konishi; T. Ohnishi; T. Nakamura; Kimimori Hamada; T. Katsuno; Y. Watanabe; Takeshi Endo; Takeo Yamamoto; K. Tsuruta; Shoichi Onda

doi:10.4028/www.scientific.net/MSF.679-680.694

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Optical Triggering of 4H-SiC Thyristors with a 365 nm UV LED
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Reverse Electrical Characteristics of 4H-SiC JBS Diodes Fabricated on In-House Substrate with Low Threading Dislocation Density
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Improved Current Gain in 4H-SiC BJTs Passivated with Deposited Oxides Followed by Nitridation
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Current Gain Degradation in 4H-SiC Power BJTs
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High Voltage, Low On-Resistance 4H-SiC BJTs with Improved Junction Termination Extension
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High Voltage 4H-SiC BJTs with Deep Mesa Edge Termination
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Reverse Electrical Characteristics of 4H-SiC JBS Diodes Fabricated on In-House Substrate with Low Threading Dislocation Density

Abstract:

The impacts of threading dislocations, surface defects, donor concentration, and schottky Schottky barrier height on the reverse IV characteristic of silicon carbide (SiC) junction barrier schottky Schottky (JBS) diodes were investigated. The 100 A JBS diodes were fabricated on 4H-SiC 3-inch N-type wafers with two types of threading dislocation density. The typical densities are were 0.2×104 and 3.8×104 cm-2, respectively. The improvement of vIt was found that variations in the leakage current and the high yield of large area JBS diodes werecould be were obtained improved by using a wafer with a low threading dislocation density. In the range of low leakage current, the investigation shows showed a correlation between leakage current and threading dislocation density.