High Voltage, Low On-Resistance 4H-SiC BJTs with Improved Junction Termination Extension

Reza Ghandi; Benedetto Buono; Martin Domeij; Carl Mikael Zetterling; Mikael Östling

doi:10.4028/www.scientific.net/MSF.679-680.706

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High Voltage, Low On-Resistance 4H-SiC BJTs with Improved Junction Termination Extension
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HomeMaterials Science ForumMaterials Science Forum Vols. 679-680High Voltage, Low On-Resistance 4H-SiC BJTs with...

High Voltage, Low On-Resistance 4H-SiC BJTs with Improved Junction Termination Extension

Abstract:

In this work, implantation-free 4H-SiC bipolar transistors with two-zone etched-JTE and improved surface passivation are fabricated. This design provides a stable open-base breakdown voltage of 2.8 kV which is about 75% of the parallel plane breakdown voltage. The small area devices shows a maximum dc current gain of 55 at Ic=0.33 A (JC=825 A/cm2) and VCESAT = 1.05 V at Ic = 0.107 A that corresponds to a low ON-resistance of 4 mΩ•cm2. The large area device shows a maximum dc current gain of 52 at Ic = 9.36 A (JC=312 A/cm2) and VCESAT = 1.14 V at Ic = 5 A that corresponds to an ON-resistance of 6.8 mΩ•cm2. Also these devices demonstrate a negative temperature coefficient of the current gain (β=26 at 200°C) and positive temperature coefficient of the ON-resistance (RON = 10.2 mΩ•cm2).

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Materials Science Forum (Volumes 679-680)

Pages:

706-709

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.679-680.706

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Online since:

March 2011

Authors:

Reza Ghandi, Benedetto Buono, Martin Domeij, Carl Mikael Zetterling, Mikael Östling

Keywords:

Bipolar Junction Transistor (BJT), Power Transistor, Silicon Carbide (SiC)

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