Improved Current Gain in 4H-SiC BJTs Passivated with Deposited Oxides Followed by Nitridation

Abstract:

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We report the improvement of current gain in 4H-SiC bipolar junction transistors (BJTs) by using deposited oxides as a surface passivation layer. Various post-deposition annealing processes were investigated. We successfully demonstrated SiC BJTs with a high current gain (β) of 86 using deposited oxides annealed in NO. This is 70% higher current gain compared with that of BJTs with the same structure with conventional thermally-grown oxides.

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

698-701

DOI:

10.4028/www.scientific.net/MSF.679-680.698

Citation:

H. Miyake et al., "Improved Current Gain in 4H-SiC BJTs Passivated with Deposited Oxides Followed by Nitridation", Materials Science Forum, Vols. 679-680, pp. 698-701, 2011

Online since:

March 2011

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Price:

$35.00

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