Improved Current Gain in 4H-SiC BJTs Passivated with Deposited Oxides Followed by Nitridation

Hiroki Miyake; Tsunenobu Kimoto; Jun Suda

doi:10.4028/www.scientific.net/MSF.679-680.698

Paper Titles

Pulse Current Characterization of SiC GTO Thyristors
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1200 V SiC BJTs with Low V_CESAT and High Temperature Capability
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Optical Triggering of 4H-SiC Thyristors with a 365 nm UV LED
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Reverse Electrical Characteristics of 4H-SiC JBS Diodes Fabricated on In-House Substrate with Low Threading Dislocation Density
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Improved Current Gain in 4H-SiC BJTs Passivated with Deposited Oxides Followed by Nitridation
p.698

Current Gain Degradation in 4H-SiC Power BJTs
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High Voltage, Low On-Resistance 4H-SiC BJTs with Improved Junction Termination Extension
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High Voltage 4H-SiC BJTs with Deep Mesa Edge Termination
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600V-30A 4H-SiC JBS and Si IGBT Hybrid Module
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HomeMaterials Science ForumMaterials Science Forum Vols. 679-680Improved Current Gain in 4H-SiC BJTs Passivated...

Improved Current Gain in 4H-SiC BJTs Passivated with Deposited Oxides Followed by Nitridation

Abstract:

We report the improvement of current gain in 4H-SiC bipolar junction transistors (BJTs) by using deposited oxides as a surface passivation layer. Various post-deposition annealing processes were investigated. We successfully demonstrated SiC BJTs with a high current gain (β) of 86 using deposited oxides annealed in NO. This is 70% higher current gain compared with that of BJTs with the same structure with conventional thermally-grown oxides.

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Materials Science Forum (Volumes 679-680)

Pages:

698-701

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.679-680.698

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Online since:

March 2011

Authors:

Hiroki Miyake, Tsunenobu Kimoto, Jun Suda

Keywords:

4H-SiC, Bipolar Junction Transistor (BJT), Current Gain, Deposited Oxide, Nitridation, Passivation

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