Improved Current Gain in 4H-SiC BJTs Passivated with Deposited Oxides Followed by Nitridation
We report the improvement of current gain in 4H-SiC bipolar junction transistors (BJTs) by using deposited oxides as a surface passivation layer. Various post-deposition annealing processes were investigated. We successfully demonstrated SiC BJTs with a high current gain (β) of 86 using deposited oxides annealed in NO. This is 70% higher current gain compared with that of BJTs with the same structure with conventional thermally-grown oxides.
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
H. Miyake et al., "Improved Current Gain in 4H-SiC BJTs Passivated with Deposited Oxides Followed by Nitridation", Materials Science Forum, Vols. 679-680, pp. 698-701, 2011