High Voltage 4H-SiC BJTs with Deep Mesa Edge Termination

Jian Hui Zhang; Jian Hui Zhao; Xiao Hui Wang; Xue Qing Li; Leonid Fursin; Peter Alexandrov; Mari Anne Gagliardi; Mike Lange; Christopher  Dries

doi:10.4028/www.scientific.net/MSF.679-680.710

Paper Titles

Reverse Electrical Characteristics of 4H-SiC JBS Diodes Fabricated on In-House Substrate with Low Threading Dislocation Density
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Improved Current Gain in 4H-SiC BJTs Passivated with Deposited Oxides Followed by Nitridation
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Current Gain Degradation in 4H-SiC Power BJTs
p.702

High Voltage, Low On-Resistance 4H-SiC BJTs with Improved Junction Termination Extension
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High Voltage 4H-SiC BJTs with Deep Mesa Edge Termination
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600V-30A 4H-SiC JBS and Si IGBT Hybrid Module
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Lifetime Control of 4.5 kV SiCGT by High-Energy Electron Irradiation
p.718

Performance Tests of a 4,1x4,1mm² SiC LCVJFET for a DC/DC Boost Converter Application
p.722

High Temperature Silicon Carbide CMOS Integrated Circuits
p.726

HomeMaterials Science ForumMaterials Science Forum Vols. 679-680High Voltage 4H-SiC BJTs with Deep Mesa Edge...

High Voltage 4H-SiC BJTs with Deep Mesa Edge Termination

Abstract:

This paper reports our recent study on 4H-SiC power bipolar junction transistors (BJTs) with deep mesa edge termination. 1200 V – 10 A 4H-SiC power BJTs with an active area of 4.64 mm2 have been demonstrated using deep mesa for direct edge termination and device isolation. The BJT’s DC current gain () is about 37, and the specific on-resistance (RSP-ON) is ~ 3.0 m-cm2. The BJT fabrication is substantially simplified and an overall 10% reduction in the device area is achieved compared to the multi-step JTE-based SiC-BJTs.

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Materials Science Forum (Volumes 679-680)

Pages:

710-713

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.679-680.710

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Online since:

March 2011

Authors:

Jian Hui Zhang, Jian Hui Zhao, Xiao Hui Wang, Xue Qing Li, Leonid Fursin, Peter Alexandrov, Mari Anne Gagliardi, Mike Lange, Christopher Dries

Keywords:

Bipolar Junction Transistor (BJT), Edge Termination, High Voltage (HV), Mesa Isolation, Power Transistor, Trench Isolation

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