High Voltage 4H-SiC BJTs with Deep Mesa Edge Termination

Abstract:

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This paper reports our recent study on 4H-SiC power bipolar junction transistors (BJTs) with deep mesa edge termination. 1200 V – 10 A 4H-SiC power BJTs with an active area of 4.64 mm2 have been demonstrated using deep mesa for direct edge termination and device isolation. The BJT’s DC current gain () is about 37, and the specific on-resistance (RSP-ON) is ~ 3.0 m-cm2. The BJT fabrication is substantially simplified and an overall 10% reduction in the device area is achieved compared to the multi-step JTE-based SiC-BJTs.

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

710-713

DOI:

10.4028/www.scientific.net/MSF.679-680.710

Citation:

J. H. Zhang et al., "High Voltage 4H-SiC BJTs with Deep Mesa Edge Termination", Materials Science Forum, Vols. 679-680, pp. 710-713, 2011

Online since:

March 2011

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Price:

$35.00

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