Paper Title:
Performance Tests of a 4,1x4,1mm2 SiC LCVJFET for a DC/DC Boost Converter Application
  Abstract

A 4.1x4.1mm2, 100mΩ 1,2kV lateral channel vertical junction field effect transistor (LCVJFET) built in silicon carbide (SiC) from SiCED, to use as the active switch component in a high-temperature operation DC/DC-boost converter, has been investigated. The switching loss for room temperature (RT) and on-state resistance (Ron) for RT up to 170°C is investigated. Since the SiC VJFET has a buried body diode it is also ideal to use instead of a switch and diode setup. The voltage drop over the body diode decreases slightly with a higher temperature. A short-circuit test has also been conducted, which shows a high ruggedness.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
722-725
DOI
10.4028/www.scientific.net/MSF.679-680.722
Citation
G. Tolstoy, D. Peftitsis, J. Rabkowski, H. P. Nee, "Performance Tests of a 4,1x4,1mm2 SiC LCVJFET for a DC/DC Boost Converter Application", Materials Science Forum, Vols. 679-680, pp. 722-725, 2011
Online since
March 2011
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Price
$35.00
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