Performance Tests of a 4,1x4,1mm² SiC LCVJFET for a DC/DC Boost Converter Application

Abstract:

A 4.1x4.1mm2, 100mΩ 1,2kV lateral channel vertical junction field effect transistor (LCVJFET) built in silicon carbide (SiC) from SiCED, to use as the active switch component in a high-temperature operation DC/DC-boost converter, has been investigated. The switching loss for room temperature (RT) and on-state resistance (Ron) for RT up to 170°C is investigated. Since the SiC VJFET has a buried body diode it is also ideal to use instead of a switch and diode setup. The voltage drop over the body diode decreases slightly with a higher temperature. A short-circuit test has also been conducted, which shows a high ruggedness.

• Periodical: Materials Science Forum (Volumes 679-680)
• Pages: 722-725
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.679-680.722
• Online since: March 2011
• Authors: Georg Tolstoy, Dimosthenis Peftitsis, Jacek Rabkowski, Hans Peter Nee
• Keywords: Junction Field Effect Transistor (JFET), Normally ON, Silicon Carbide (SiC), Switching Loss, VJFET

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