300°C Silicon Carbide Integrated Circuits

Zachary Stum; Vinayak Tilak; Peter A. Losee; Emad Andarawis; Cheng Po Chen

doi:10.4028/www.scientific.net/MSF.679-680.730

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HomeMaterials Science ForumMaterials Science Forum Vols. 679-680300°C Silicon Carbide Integrated Circuits

300°C Silicon Carbide Integrated Circuits

Abstract:

MOSFET-based integrated circuits were fabricated on silicon carbide (SiC) substrates. SiC devices can operate at much higher temperatures than current semiconductor devices. Simple circuit components including operational amplifiers and common source amplifiers were fabricated and tested at room temperature and at 300°C. The common source amplifier displayed gain of 7.6 at room temperature and 6.8 at 300°C. The operational amplifier was tested for small signal open loop gain at 1kHz, measuring 60 dB at room temperature and 57 dB at 300°C. Stability testing was also performed at 300°C, showing very little drift at over 100 hours for the individual MOSFETs and the common source amplifier.

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Materials Science Forum (Volumes 679-680)

Pages:

730-733

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.679-680.730

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Online since:

March 2011

Authors:

Zachary Stum, Vinayak Tilak, Peter A. Losee, Emad Andarawis, Cheng Po Chen

Keywords:

High-Temperature, MOSFET, Silicon Carbide (SiC)

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