An All Silicon Carbide High Temperature (450+ °C) High Voltage Gain AC Coupled Differential Amplifier

Jie Yang; John Fraley; Bryon Western; Marcelo Schupbach; Alexander B. Lostetter

doi:10.4028/www.scientific.net/MSF.679-680.746

Paper Titles

300°C Silicon Carbide Integrated Circuits
p.730

4H-SiC N-MOSFET Logic Circuits for High Temperature Operation
p.734

Forced-Air-Cooled 10 kW Three-Phase SiC Inverter with Output Power Density of More than 20 kW/L
p.738

Thermal Management versus Full Isolation: Trade Off in Packaging Technologies of Modern SiC Diodes
p.742

An All Silicon Carbide High Temperature (450+ °C) High Voltage Gain AC Coupled Differential Amplifier
p.746

Fault Protection System for Current Source Inverter with Normally on SiC JFETs
p.750

Study on the Feasibility of SiC Bandgap Voltage Reference for High Temperature Applications
p.754

Measurements and Simulations of Lateral PNP Transistors in a SiC NPN BJT Technology for High Temperature Integrated Circuits
p.758

A Molded Package Optimized for High Voltage SiC-Devices
p.762

HomeMaterials Science ForumMaterials Science Forum Vols. 679-680An All Silicon Carbide High Temperature (450+ °C)...

An All Silicon Carbide High Temperature (450+ °C) High Voltage Gain AC Coupled Differential Amplifier

Abstract:

APEI, Inc. designed, fabricated and tested a high gain AC coupled differential amplifier based on a custom-built silicon carbide (SiC) vertical junction field effect transistor (VJFET). This SiC differential amplifier is capable of extreme temperature operation up to 450 °C, at which a high differential voltage gain of more than 47 dB is maintained. This high gain AC coupled differential amplifier can be integrated with high temperature sensors that deliver weak AC output signals to improve signal quality and noise immunity.