An All Silicon Carbide High Temperature (450+ °C) High Voltage Gain AC Coupled Differential Amplifier
APEI, Inc. designed, fabricated and tested a high gain AC coupled differential amplifier based on a custom-built silicon carbide (SiC) vertical junction field effect transistor (VJFET). This SiC differential amplifier is capable of extreme temperature operation up to 450 °C, at which a high differential voltage gain of more than 47 dB is maintained. This high gain AC coupled differential amplifier can be integrated with high temperature sensors that deliver weak AC output signals to improve signal quality and noise immunity.
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
J. Yang et al., "An All Silicon Carbide High Temperature (450+ °C) High Voltage Gain AC Coupled Differential Amplifier", Materials Science Forum, Vols. 679-680, pp. 746-749, 2011