An All Silicon Carbide High Temperature (450+ °C) High Voltage Gain AC Coupled Differential Amplifier

Abstract:

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APEI, Inc. designed, fabricated and tested a high gain AC coupled differential amplifier based on a custom-built silicon carbide (SiC) vertical junction field effect transistor (VJFET). This SiC differential amplifier is capable of extreme temperature operation up to 450 °C, at which a high differential voltage gain of more than 47 dB is maintained. This high gain AC coupled differential amplifier can be integrated with high temperature sensors that deliver weak AC output signals to improve signal quality and noise immunity.

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

746-749

DOI:

10.4028/www.scientific.net/MSF.679-680.746

Citation:

J. Yang et al., "An All Silicon Carbide High Temperature (450+ °C) High Voltage Gain AC Coupled Differential Amplifier", Materials Science Forum, Vols. 679-680, pp. 746-749, 2011

Online since:

March 2011

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Price:

$35.00

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