A Molded Package Optimized for High Voltage SiC-Devices

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We present first results on power cycling of 6.5 kV SiC PiN-diodes mounted into a molded package. The geometry of this lateral package was designed to fulfill the specifications of the electrical isolation and the creepage distances in the high voltage region of 6.5 kV. To evaluate the suitability of this package we used high voltage SiC PiN-diodes. The diodes were soldered onto a copper lead frame, wire bonded and covered by molding compound. The packaged diodes were characterized by electrical measurements before and during a power cycling test with a temperature swing of 90 K. These results showed long term stable behavior of the I-V characteristics of the diodes as well as the suitability of the package for high temperature and high voltage application of SiC devices.

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

762-765

DOI:

10.4028/www.scientific.net/MSF.679-680.762

Citation:

K. O. Dohnke et al., "A Molded Package Optimized for High Voltage SiC-Devices", Materials Science Forum, Vols. 679-680, pp. 762-765, 2011

Online since:

March 2011

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Price:

$35.00

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