Study on the Feasibility of SiC Bandgap Voltage Reference for High Temperature Applications
This work demonstrates that a stable voltage reference with temperature, in the 25°C-300°C range is possible using SiC bipolar diodes. In a previous work, we have been demonstrated both theoretical and experimentally, the feasibility of SiC bandgap voltage reference using SiC Schottky diodes . The present work completes the investigation on SiC bandgap reference by the using of SiC bipolar diodes. Simulated and experimental results for two different SiC devices: Schottky and bipolar diodes showed that the principles that govern the bandgap voltage references for Si are also valid for the SiC. A comparison between the output voltage levels of the two types of bandgap reference is also presented.
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
V. Banu et al., "Study on the Feasibility of SiC Bandgap Voltage Reference for High Temperature Applications", Materials Science Forum, Vols. 679-680, pp. 754-757, 2011