Study on the Feasibility of SiC Bandgap Voltage Reference for High Temperature Applications

Abstract:

This work demonstrates that a stable voltage reference with temperature, in the 25°C-300°C range is possible using SiC bipolar diodes. In a previous work, we have been demonstrated both theoretical and experimentally, the feasibility of SiC bandgap voltage reference using SiC Schottky diodes [1]. The present work completes the investigation on SiC bandgap reference by the using of SiC bipolar diodes. Simulated and experimental results for two different SiC devices: Schottky and bipolar diodes showed that the principles that govern the bandgap voltage references for Si are also valid for the SiC. A comparison between the output voltage levels of the two types of bandgap reference is also presented.

• Periodical: Materials Science Forum (Volumes 679-680)
• Pages: 754-757
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.679-680.754
• Online since: March 2011
• Authors: Viorel Banu, Philippe Godignon, Xavier Jordá, Mihaela Alexandru, José Millan
• Keywords: Bandgap Reference, High-Temperature, SiC Bipolar Diode, SiC Voltage Reference

References

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