Study on the Feasibility of SiC Bandgap Voltage Reference for High Temperature Applications

Abstract:

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This work demonstrates that a stable voltage reference with temperature, in the 25°C-300°C range is possible using SiC bipolar diodes. In a previous work, we have been demonstrated both theoretical and experimentally, the feasibility of SiC bandgap voltage reference using SiC Schottky diodes [1]. The present work completes the investigation on SiC bandgap reference by the using of SiC bipolar diodes. Simulated and experimental results for two different SiC devices: Schottky and bipolar diodes showed that the principles that govern the bandgap voltage references for Si are also valid for the SiC. A comparison between the output voltage levels of the two types of bandgap reference is also presented.

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

754-757

DOI:

10.4028/www.scientific.net/MSF.679-680.754

Citation:

V. Banu et al., "Study on the Feasibility of SiC Bandgap Voltage Reference for High Temperature Applications", Materials Science Forum, Vols. 679-680, pp. 754-757, 2011

Online since:

March 2011

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Price:

$35.00

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