Measurements and Simulations of Lateral PNP Transistors in a SiC NPN BJT Technology for High Temperature Integrated Circuits

Luigia Lanni; Reza Ghandi; Martin Domeij; Carl Mikael Zetterling; B. Gunnar Malm; Mikael Östling

doi:10.4028/www.scientific.net/MSF.679-680.758

Paper Titles

Thermal Management versus Full Isolation: Trade Off in Packaging Technologies of Modern SiC Diodes
p.742

An All Silicon Carbide High Temperature (450+ °C) High Voltage Gain AC Coupled Differential Amplifier
p.746

Fault Protection System for Current Source Inverter with Normally on SiC JFETs
p.750

Study on the Feasibility of SiC Bandgap Voltage Reference for High Temperature Applications
p.754

Measurements and Simulations of Lateral PNP Transistors in a SiC NPN BJT Technology for High Temperature Integrated Circuits
p.758

A Molded Package Optimized for High Voltage SiC-Devices
p.762

Local Electrical Properties of the 4H-SiC(0001)/Graphene Interface
p.769

The Formation of an Epitaxial-Graphene Cap Layer for Post-Implantation High Temperature Annealing of SiC and its In Situ Removal by Si-Vapor Etching
p.777

Nanobaguettes Single Epitaxial Graphene Layers on SiC(11-20)
p.781

HomeMaterials Science ForumMaterials Science Forum Vols. 679-680Measurements and Simulations of Lateral PNP...

Measurements and Simulations of Lateral PNP Transistors in a SiC NPN BJT Technology for High Temperature Integrated Circuits

Abstract:

In this work, a 4H-SiC lateral PNP transistor fabricated in a high voltage NPN technology has been simulated and characterized. The possibility of fabricating a lateral PNP with a current gain larger than 1 has been investigated. Device and circuit level solutions have been performed.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2010

View Preview

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Pages:

758-761

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.679-680.758

Citation:

Cite this paper

Online since:

March 2011

Authors:

Luigia Lanni, Reza Ghandi, Martin Domeij, Carl Mikael Zetterling, B. Gunnar Malm, Mikael Östling

Keywords:

4H-SiC, Lateral PNP, NPN, Spice Model, Sziklay Configuration

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] A. Lostetter, J. Hornberger, B. McPherson, B. Reese, R. Shaw, M. Schupbach, B. Rowden, A. Mantooth, J. Balda, T. Otsuka, K. Okumura, and M. Miura, High-Temperature Silicon Carbide and Silicon on Insulator Based Integrated Power Modules, 2009 IEEE Vehicle Power and Propulsion Conference, Dearborn, Michigan, September 7-11, (2009).

DOI: 10.1109/vppc.2009.5289735

Google Scholar

[2] P. Horowitz, W. Hill, The art of electronics, Cambridge University Press, Cambridge (1989), pp.95-96.

Google Scholar

[3] R. Ghandi, H. -S. Lee, M. Domeij, B. Buono, C. -M. Zetterling, M. Östling, IEEE Electron Device Letters, vol. 29, no. 10, pp.1135-1137, (2008).

DOI: 10.1109/led.2008.2004419

Google Scholar

[4] Sentaurus TCAD version 10. 0 from Synopsys Inc. www. synopsys. com.

Google Scholar

[5] B. Buono, R. Ghandi, M. Domeij, G. Malm, C. -M. Zetterling, M. Östling, IEEE Transactions on Electron Devices, vol. 57, no. 3, pp.704-711 (2010).

DOI: 10.1109/ted.2009.2039099

Google Scholar