Thermal Management versus Full Isolation: Trade Off in Packaging Technologies of Modern SiC Diodes
In this paper we compare the thermal behavior of identical SiC Schottky diodes mounted in i) a standard TO220 package (TO220) with non-isolated backside applying standard soft solder and diffusion solder die attach with ii) a so called FULLPAK TO220 package (TO220FP, only diffusion soldering). Depending on the solder technique the heat transport from the junction area of the SiC Schottky diode to the heat sink or to the package backside is improved for the diodes mounted via diffusion solder. For small chips this holds even for TO220FP in comparison to TO220 with standard solder. Simulations of the vertical temperature distribution after electrically heating with a half sine wave for 10ms up to 190W show a decrease of the maximal junction temperature of the SiC Schottky diode from TJ=260 °C to TJ=180 °C if the diffusion solder is used independent from the package type.
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
R. Gerlach et al., "Thermal Management versus Full Isolation: Trade Off in Packaging Technologies of Modern SiC Diodes", Materials Science Forum, Vols. 679-680, pp. 742-745, 2011