4H-SiC N-MOSFET Logic Circuits for High Temperature Operation

Martin Le-Huu; Michael Grieb; Frederik F. Schrey; H. Schmitt; Volker Haeublein; Anton J. Bauer; Heiner Ryssel; Lothar Frey

doi:10.4028/www.scientific.net/MSF.679-680.734

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HomeMaterials Science ForumMaterials Science Forum Vols. 679-6804H-SiC N-MOSFET Logic Circuits for High...

4H-SiC N-MOSFET Logic Circuits for High Temperature Operation

Abstract:

The suitability of normally-off 4H-SiC MOSFETs for high temperature operation in logic gates is investigated. Fowler-Nordheim analysis shows a lowering of the effective tunneling barrier height at elevated temperatures. Trap assisted tunneling induced by carbon interstitials is proposed as the responsible mechanism. Nevertheless, reliability of MOS devices even at 400°C is excellent with an extrapolated critical field of 2.69MV/cm for a 10 year time to dielectric breakdown. The switching behavior of logic gates is also characterized between 25°C and 400°C. Using these logic gates, a fully integrated edge triggered flip-flop is build and high temperature operation is demonstrated.

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Periodical:

Materials Science Forum (Volumes 679-680)

Pages:

734-737

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.679-680.734

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Online since:

March 2011

Authors:

Martin Le-Huu, Michael Grieb, Frederik F. Schrey, H. Schmitt, Volker Haeublein, Anton J. Bauer, Heiner Ryssel, Lothar Frey

Keywords:

Fowler-Nordheim, High Temperature Electronics, Logic Circuits, Poole-Frenkel, TDDB

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