Lifetime Control of 4.5 kV SiCGT by High-Energy Electron Irradiation

Katsunori Asano; Koji Nakayama; Yoichi Miyanagi; Atsushi Tanaka; Masahiko Nishimura; Toru Izumi; Shuuji Ogata; Toshihiko Hayashi

doi:10.4028/www.scientific.net/MSF.679-680.718

Paper Titles

Current Gain Degradation in 4H-SiC Power BJTs
p.702

High Voltage, Low On-Resistance 4H-SiC BJTs with Improved Junction Termination Extension
p.706

High Voltage 4H-SiC BJTs with Deep Mesa Edge Termination
p.710

600V-30A 4H-SiC JBS and Si IGBT Hybrid Module
p.714

Lifetime Control of 4.5 kV SiCGT by High-Energy Electron Irradiation
p.718

Performance Tests of a 4,1x4,1mm² SiC LCVJFET for a DC/DC Boost Converter Application
p.722

High Temperature Silicon Carbide CMOS Integrated Circuits
p.726

300°C Silicon Carbide Integrated Circuits
p.730

4H-SiC N-MOSFET Logic Circuits for High Temperature Operation
p.734

HomeMaterials Science ForumMaterials Science Forum Vols. 679-680Lifetime Control of 4.5 kV SiCGT by High-Energy...

Lifetime Control of 4.5 kV SiCGT by High-Energy Electron Irradiation

Abstract:

The measured turn-off waveforms of 4.5 kV SiCGTs by using electron irradiation with various electron doses are reported. The turn-off time decreased with an increase in the electron dose. Furthermore, the turn-off characteristics of SiCGTs with p-type drift layer, which assumed the various trap concentrations, are simulated. The relation between the turn-off characteristics and the trap is also investigated. The simulated results show good correlation to measured data and the simulated turn-off times decrease with an increase in the electron dose as well as measured data.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2010

View Preview

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Pages:

718-721

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.679-680.718

Citation:

Cite this paper

Online since:

March 2011

Authors:

Katsunori Asano, Koji Nakayama, Yoichi Miyanagi, Atsushi Tanaka, Masahiko Nishimura, Toru Izumi, Shuuji Ogata, Toshihiko Hayashi

Keywords:

Electron Irradiation, Lifetime Control, SICGT, Z_1/2 Trap

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] Y. Sugawara, S. Ogata, Y. Miyanagi, K. Asano, S. Okada, A. Tanaka, K. Nakayama and T. Izumi: Mater. Sci. Forum, Vols. 600-603 (2009), pp.1179-1182.

DOI: 10.4028/www.scientific.net/msf.600-603.1179

Google Scholar

[2] K. Danno and T. Kimoto: Mater. Sci. Forum, Vols. 556-557 (2007), pp.331-334.

Google Scholar

[3] Y. Sugawara, D. Takayama, K. Asano, A. Agarwal, S. Ryu, J. Palmour and S. Ogata: Proceedings of 2004 ISPSD (2004), pp.365-368.

Google Scholar

[4] Y. Sugawara, Y. Miyanagi, K. Asano, A. Agarwal, S. Ryu, J. Palmour, Y. Shouji, S. Ogata and T. Izumi: Proceedings of 18th ISPSD (2006), pp.117-120.

Google Scholar

[5] N. Iwamoto, S. Onoda, T. Ohshima, K. Kojima, A. Koizumi, K. Uchida and S. Nozaki: Mater. Sci. Forum, Vols. 645-648 (2010), pp.921-924.

DOI: 10.4028/www.scientific.net/msf.645-648.921

Google Scholar

[6] T. Dalibor, G. Pensl, H. Matsunami, T. Kimoto, W. J. Choyke, A. Schöner and N. Nordell: Phys. Stat. Sol (a), Vol. 162 (1997), pp.199-225.

DOI: 10.1002/1521-396x(199707)162:1<199::aid-pssa199>3.0.co;2-0

Google Scholar

[7] T. Kimoto, K. Danno and J. Suda, in: Silicon Carbide, edited by P. Friedrichs, T. Kimoto, L. Ley and G. Pensl, Volume 1 of Growth, Defect and Novel Applications, chapter 10, WILEY-VCH (2010), p.281.

DOI: 10.1002/9783527629053

Google Scholar