600V-30A 4H-SiC JBS and Si IGBT Hybrid Module

Yu Zhu Li; Wei Jiang Ni; Zhe Yang Li; Yun Li; Chen Chen; Xiao Jian Chen

doi:10.4028/www.scientific.net/MSF.679-680.714

Paper Titles

Improved Current Gain in 4H-SiC BJTs Passivated with Deposited Oxides Followed by Nitridation
p.698

Current Gain Degradation in 4H-SiC Power BJTs
p.702

High Voltage, Low On-Resistance 4H-SiC BJTs with Improved Junction Termination Extension
p.706

High Voltage 4H-SiC BJTs with Deep Mesa Edge Termination
p.710

600V-30A 4H-SiC JBS and Si IGBT Hybrid Module
p.714

Lifetime Control of 4.5 kV SiCGT by High-Energy Electron Irradiation
p.718

Performance Tests of a 4,1x4,1mm² SiC LCVJFET for a DC/DC Boost Converter Application
p.722

High Temperature Silicon Carbide CMOS Integrated Circuits
p.726

300°C Silicon Carbide Integrated Circuits
p.730

HomeMaterials Science ForumMaterials Science Forum Vols. 679-680600V-30A 4H-SiC JBS and Si IGBT Hybrid Module

600V-30A 4H-SiC JBS and Si IGBT Hybrid Module

Abstract:

600V-30A 4H-SiC Junction Barrier Schottky（JBS）diodes were designed and fabricated using SiC epitaxy and device technology. SiC JBS diodes were packaged in Si IGBT module，and switching measurements were done at 125°C. As free-wheeling diode for Si IGBT, 600V SiC JBS diode was compared to 600V ultra-fast diode from International Rectifier. SiC diode achieved 90% recovery loss reduction and corresponding IGBT showed 30% lower turn-on loss. However, SiC JBS diode has larger on-state voltage drop due to small chip area. On-state power loss will be lowered by increasing SiC chip area.