600V-30A 4H-SiC JBS and Si IGBT Hybrid Module

Abstract:

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600V-30A 4H-SiC Junction Barrier Schottky(JBS)diodes were designed and fabricated using SiC epitaxy and device technology. SiC JBS diodes were packaged in Si IGBT module,and switching measurements were done at 125°C. As free-wheeling diode for Si IGBT, 600V SiC JBS diode was compared to 600V ultra-fast diode from International Rectifier. SiC diode achieved 90% recovery loss reduction and corresponding IGBT showed 30% lower turn-on loss. However, SiC JBS diode has larger on-state voltage drop due to small chip area. On-state power loss will be lowered by increasing SiC chip area.

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

714-717

DOI:

10.4028/www.scientific.net/MSF.679-680.714

Citation:

Y. Z. Li et al., "600V-30A 4H-SiC JBS and Si IGBT Hybrid Module", Materials Science Forum, Vols. 679-680, pp. 714-717, 2011

Online since:

March 2011

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Price:

$35.00

[1] B. Hull et al, Mater. Sci. Forum Vol. 600-603 (2009), pp.931-934.

[2] Y. Li,Z. Li, X. Dong and C. Chen, Semiconductor Technology (2008), Vol. 33, pp.266-268.

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