600-V Symmetrical Bi-Directional Power Switching Using SiC Vertical-Channel JFETs with Reliable Edge Termination

Victor Veliadis; Damian Urciuoli; H.C. Ha; Harold Hearne; Charles Scozzie

doi:10.4028/www.scientific.net/MSF.679-680.591

Paper Titles

4H-SiC Schottky Diodes for Temperature Sensing Applications in Harsh Environments
p.575

Low Earth Orbit Space Environment Testing of Extreme Temperature 6H-SiC JFETs on the International Space Station
p.579

Low Switching Energy 1200V Normally-Off SiC VJFET Power Modules
p.583

1200V SiC JFET in Cascode Light Configuration: Comparison versus Si and SiC Based Switches
p.587

600-V Symmetrical Bi-Directional Power Switching Using SiC Vertical-Channel JFETs with Reliable Edge Termination
p.591

Study of Mobility Limiting Mechanisms in (0001) 4H and 6H-SiC MOSFETs
p.595

High-Temperature Reliability of SiC Power MOSFETs
p.599

Instability of 4H-SiC MOSFET Characteristics due to Interface Traps with Long Time Constants
p.603

1.4kV Double-Implanted MOSFETs Fabricated on 4H-SiC(000-1)
p.607

HomeMaterials Science ForumMaterials Science Forum Vols. 679-680600-V Symmetrical Bi-Directional Power Switching...

600-V Symmetrical Bi-Directional Power Switching Using SiC Vertical-Channel JFETs with Reliable Edge Termination

Abstract:

Numerous high-voltage applications require symmetrical bi-directional power flow control and protection circuitry. While mechanical contactors and circuit breakers provide bi-directional fault protection, they have slow actuation and suffer severe degradation during repeated fault isolation. The normally-on (N-ON) SiC vertical-channel Junction-Field-Effect-Transistor (VJFET) is an efficient solution for bi-directional circuit-breaker applications due to its low conduction/switching losses, +500°C operational capability, ON-state match of the no-fault operating mode of the system, efficient gate-drive operation under unipolar biasing, and majority carrier device scalability. Efficient 600-V/10-A symmetrical bi-directional power flow was demonstrated using 0.1-cm2 1200-V rated N-ON VJFETs with a gate driver applying 0-V and -34 V gate biases during the ON and OFF states, respectively. A self-aligned trenched guard-ring structure provides reliable edge termination.