4H-SiC Schottky Diodes for Temperature Sensing Applications in Harsh Environments

Abstract:

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4H-SiC Schottky Barrier Diodes (SBDs) with remarkable electrical performance have been fabricated and characterised. A barrier height about 1.64V and an ideality factor close to 1 are extracted from the forward characteristics measured at several temperatures. These essential Schottky contact parameters are observed to be constant with temperature. A temperature probe with a simple and innovative scheme is designed and applied. The probe uses SiC SBDs as temperature sensor in the 20-4000C range, with measured sensitivities varying from 1.3 mV/K to 2.8 mV/K. The probe is meant to monitorize the temperature inside the furnaces, in the cement industry.

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

575-578

DOI:

10.4028/www.scientific.net/MSF.679-680.575

Citation:

G. Brezeanu et al., "4H-SiC Schottky Diodes for Temperature Sensing Applications in Harsh Environments", Materials Science Forum, Vols. 679-680, pp. 575-578, 2011

Online since:

March 2011

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Price:

$35.00

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