4H-SiC Schottky Diodes for Temperature Sensing Applications in Harsh Environments
4H-SiC Schottky Barrier Diodes (SBDs) with remarkable electrical performance have been fabricated and characterised. A barrier height about 1.64V and an ideality factor close to 1 are extracted from the forward characteristics measured at several temperatures. These essential Schottky contact parameters are observed to be constant with temperature. A temperature probe with a simple and innovative scheme is designed and applied. The probe uses SiC SBDs as temperature sensor in the 20-4000C range, with measured sensitivities varying from 1.3 mV/K to 2.8 mV/K. The probe is meant to monitorize the temperature inside the furnaces, in the cement industry.
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
G. Brezeanu et al., "4H-SiC Schottky Diodes for Temperature Sensing Applications in Harsh Environments", Materials Science Forum, Vols. 679-680, pp. 575-578, 2011