Optical and Electrical Simulation of 4H-SiC UV Photodetector by Finite Element Method

Stéphane Biondo; Wilfried Vervisch; Laurent Ottaviani; Olivier Palais

doi:10.4028/www.scientific.net/MSF.679-680.563

Paper Titles

Effect of Proton Irradiation Induced Defects on 4H-SiC Schottky Diode X-Ray Detectors
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Proton Irradiation of 4H-SiC Ultraviolet Single Photon Avalanche Diodes
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3.3 kV Rated Silicon Carbide Schottky Diodes with Epitaxial Field Stop Ring
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SiC Zener Diode for Gate Protection of 4.5 kV SiCGT
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Optical and Electrical Simulation of 4H-SiC UV Photodetector by Finite Element Method
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Avalanche Diodes with Low Temperature Dependence in 4H-SiC Suitable for Parallel Protection
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Thermally-Assisted Tunneling Model for 3C-SiC p⁺-n Diodes
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4H-SiC Schottky Diodes for Temperature Sensing Applications in Harsh Environments
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Low Earth Orbit Space Environment Testing of Extreme Temperature 6H-SiC JFETs on the International Space Station
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HomeMaterials Science ForumMaterials Science Forum Vols. 679-680Optical and Electrical Simulation of 4H-SiC UV...

Optical and Electrical Simulation of 4H-SiC UV Photodetector by Finite Element Method

Abstract:

This paper focuses on UV-photodetector simulation. The calculus method description and the physical equations which occur in this model are presented as well as the UV-photodetector structure (p+n--n+ diode). Based on the Finite Element Method the electrical part solves the continuity and Poisson equation, and the optical part solves by Maxwell’s equation, FDTD [1]. Simulation works point out the influence of the p+-type layer on the electrical characteristics such as the current densities versus reverse bias. Indeed, simulation results show the current density increase with the decrease doping concentration or the p+-type layer thickness.

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Materials Science Forum (Volumes 679-680)

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563-566

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.679-680.563

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Online since:

March 2011

Authors:

Stéphane Biondo, Wilfried Vervisch, Laurent Ottaviani, Olivier Palais

Keywords:

4H-SiC, Continuity Equation, Current Density, Finite Difference Time Domain (FDTD), UV-Photodetector Simulation

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