Optical and Electrical Simulation of 4H-SiC UV Photodetector by Finite Element Method

Abstract:

Article Preview

This paper focuses on UV-photodetector simulation. The calculus method description and the physical equations which occur in this model are presented as well as the UV-photodetector structure (p+n--n+ diode). Based on the Finite Element Method the electrical part solves the continuity and Poisson equation, and the optical part solves by Maxwell’s equation, FDTD [1]. Simulation works point out the influence of the p+-type layer on the electrical characteristics such as the current densities versus reverse bias. Indeed, simulation results show the current density increase with the decrease doping concentration or the p+-type layer thickness.

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

563-566

DOI:

10.4028/www.scientific.net/MSF.679-680.563

Citation:

S. Biondo et al., "Optical and Electrical Simulation of 4H-SiC UV Photodetector by Finite Element Method", Materials Science Forum, Vols. 679-680, pp. 563-566, 2011

Online since:

March 2011

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.