Effect of Proton Irradiation Induced Defects on 4H-SiC Schottky Diode X-Ray Detectors

Rupert C. Stevens; Konstantin Vassilevski; John E. Lees; Nicolas G. Wright; Alton B. Horsfall

doi:10.4028/www.scientific.net/MSF.679-680.547

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HomeMaterials Science ForumMaterials Science Forum Vols. 679-680Effect of Proton Irradiation Induced Defects on...

Effect of Proton Irradiation Induced Defects on 4H-SiC Schottky Diode X-Ray Detectors

Abstract:

Detectors capable of withstanding high radiation environments for prolonged periods of exposure are essential for the monitoring of nuclear power stations and nuclear waste as well as for space exploration. Schottky diode X-ray detectors were exposed to high dose proton irradiation (1013 cm-2, 50 MeV) and changes in the detection resolution (spectroscopic full width half-maximum) have been observed. Using Deep Level Transient Spectroscopy (DLTS) and the degradation of the electrical characteristics of the diode, we have shown that radiation induced traps located in the upper half of the bandgap have reduced the concentration of carriers.

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Materials Science Forum (Volumes 679-680)

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547-550

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.679-680.547

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Online since:

March 2011

Authors:

Rupert C. Stevens, Konstantin Vassilevski, John E. Lees, Nicolas G. Wright, Alton B. Horsfall

Keywords:

DLTS, Proton Irradiation, Schottky Diode, X-Ray Detection

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