Bipolar Degradation of High Voltage 4H-SiC p-i-n Diodes in Pulse Regime
We report on specific features of forward voltage degradation of 4H-SiC p-i-n diodes in the pulse mode. It is shown that pulse stresses with a pulse duration shorter than several milliseconds cause substantially smaller forward voltage drift in comparison with a dc stress with the same charge passed through the diodes and the same distribution of injected carriers. A self-recovery of the forward voltage is observed at room temperature.
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
M. E. Levinshtein et al., "Bipolar Degradation of High Voltage 4H-SiC p-i-n Diodes in Pulse Regime", Materials Science Forum, Vols. 679-680, pp. 539-542, 2011