Bipolar Degradation of High Voltage 4H-SiC p-i-n Diodes in Pulse Regime

Abstract:

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We report on specific features of forward voltage degradation of 4H-SiC p-i-n diodes in the pulse mode. It is shown that pulse stresses with a pulse duration shorter than several milliseconds cause substantially smaller forward voltage drift in comparison with a dc stress with the same charge passed through the diodes and the same distribution of injected carriers. A self-recovery of the forward voltage is observed at room temperature.

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

539-542

DOI:

10.4028/www.scientific.net/MSF.679-680.539

Citation:

M. E. Levinshtein et al., "Bipolar Degradation of High Voltage 4H-SiC p-i-n Diodes in Pulse Regime", Materials Science Forum, Vols. 679-680, pp. 539-542, 2011

Online since:

March 2011

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Price:

$35.00

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