Bipolar Degradation of High Voltage 4H-SiC p-i-n Diodes in Pulse Regime

Michael E. Levinshtein; Pavel A. Ivanov; John W. Palmour; Anant K. Agarwal; Mrinal K. Das

doi:10.4028/www.scientific.net/MSF.679-680.539

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HomeMaterials Science ForumMaterials Science Forum Vols. 679-680Bipolar Degradation of High Voltage 4H-SiC p-i-n...

Bipolar Degradation of High Voltage 4H-SiC p-i-n Diodes in Pulse Regime

Abstract:

We report on specific features of forward voltage degradation of 4H-SiC p-i-n diodes in the pulse mode. It is shown that pulse stresses with a pulse duration shorter than several milliseconds cause substantially smaller forward voltage drift in comparison with a dc stress with the same charge passed through the diodes and the same distribution of injected carriers. A self-recovery of the forward voltage is observed at room temperature.

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Materials Science Forum (Volumes 679-680)

Pages:

539-542

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.679-680.539

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Online since:

March 2011

Authors:

Michael E. Levinshtein, Pavel A. Ivanov, John W. Palmour, Anant K. Agarwal, Mrinal K. Das

Keywords:

Bipolar Diode, Degradation, Pulse Regime, Stacking Fault

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