Component Technologies for Ultra-High-Voltage 4H-SiC pin Diode

Abstract:

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Forward voltage drops of carbon implanted and thermal oxidized pin diode with thick drift layer are investigated to evaluate the effect on the lifetime. The forward voltage drops of the carbon implanted and thermal oxidized pin diodes with drift layer of 120 μm thick were around 4.0 V. Furthermore, blocking characteristics of 4H-SiC pin diodes with mesa-JTE, which were fabricated on C-face and Si-face substrates, are also investigated. The breakdown voltages of pin diodes with 250 μm and 100 μm epitaxial layers are 17.1 kV and 10.9 kV, respectively.

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

535-538

DOI:

10.4028/www.scientific.net/MSF.679-680.535

Citation:

K. Nakayama et al., "Component Technologies for Ultra-High-Voltage 4H-SiC pin Diode", Materials Science Forum, Vols. 679-680, pp. 535-538, 2011

Online since:

March 2011

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Price:

$35.00

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