Component Technologies for Ultra-High-Voltage 4H-SiC pin Diode

Koji Nakayama; Ryosuke Ishii; Katsunori Asano; Tetsuya Miyazawa; Masahiko Ito; Hidekazu Tsuchida

doi:10.4028/www.scientific.net/MSF.679-680.535

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HomeMaterials Science ForumMaterials Science Forum Vols. 679-680Component Technologies for Ultra-High-Voltage...

Component Technologies for Ultra-High-Voltage 4H-SiC pin Diode

Abstract:

Forward voltage drops of carbon implanted and thermal oxidized pin diode with thick drift layer are investigated to evaluate the effect on the lifetime. The forward voltage drops of the carbon implanted and thermal oxidized pin diodes with drift layer of 120 μm thick were around 4.0 V. Furthermore, blocking characteristics of 4H-SiC pin diodes with mesa-JTE, which were fabricated on C-face and Si-face substrates, are also investigated. The breakdown voltages of pin diodes with 250 μm and 100 μm epitaxial layers are 17.1 kV and 10.9 kV, respectively.

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Periodical:

Materials Science Forum (Volumes 679-680)

Pages:

535-538

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.679-680.535

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Online since:

March 2011

Authors:

Koji Nakayama, Ryosuke Ishii, Katsunori Asano, Tetsuya Miyazawa, Masahiko Ito, Hidekazu Tsuchida

Keywords:

Carbon Implantation, Multi-Zone JTE, Thermal Oxidation, Ultra-High-Voltage pin Diode

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