Advances in Silicon Carbide Single Photon Detectors

Alexey V. Vert; Stanislav I. Soloviev; Peter M. Sandvik

doi:10.4028/www.scientific.net/MSF.679-680.543

Paper Titles

Fabrication of n-Type Nanocrystalline Diamond/3C-SiC/p-Si(001) Junctions
p.524

An Experimental Study of High Voltage SiC PiN Diode Modules Designed for 6.5 KV / 1 KA
p.531

Component Technologies for Ultra-High-Voltage 4H-SiC pin Diode
p.535

Bipolar Degradation of High Voltage 4H-SiC p-i-n Diodes in Pulse Regime
p.539

Advances in Silicon Carbide Single Photon Detectors
p.543

Effect of Proton Irradiation Induced Defects on 4H-SiC Schottky Diode X-Ray Detectors
p.547

Proton Irradiation of 4H-SiC Ultraviolet Single Photon Avalanche Diodes
p.551

3.3 kV Rated Silicon Carbide Schottky Diodes with Epitaxial Field Stop Ring
p.555

SiC Zener Diode for Gate Protection of 4.5 kV SiCGT
p.559

HomeMaterials Science ForumMaterials Science Forum Vols. 679-680Advances in Silicon Carbide Single Photon...

Advances in Silicon Carbide Single Photon Detectors

Abstract:

We present overview of achieved results on 4H-SiC avalanche photodiodes (APDs) and arrays. Cost-effective solar-blind optical filter allows achieving high solar photon rejection ratio of more than 106 in combination with more than 40% single photon detection efficiency at 266nm. Three iterations of devices were fabricated and evaluated to compare their optical and electrical properties. Dark count rates and single photon detection efficiencies are the main characteristics compared for these three iterations of device designs.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2010

View Preview

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Pages:

543-546

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.679-680.543

Citation:

Cite this paper

Online since:

March 2011

Authors:

Alexey V. Vert, Stanislav I. Soloviev, Peter M. Sandvik

Keywords:

Avalanche Photodiode, Dark Count Rate, Geiger Mode, Silicon Carbide (SiC), Single Photon Detection

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] P. Schreiber, T. Dang, T. Pickenpaugh, G. Smith, P. Gehred, C. Litton: Proc. of SPIE - The International Society for Optical Engineering, Vol. 3629 (1999), p.230.

Google Scholar

[2] A. Vert, S. Soloviev, P. Sandvik, J. Fronheiser: IEEE Phot. Tech. Lett., Vol. 20 N. 18 (2008), p.1587.

Google Scholar

[3] X. Bai, D. McIntosh, H. Din, J. Campbell: Proc. of SPIE - The Int. Soc. for Opt. Eng., Vol. 7320 (2009).

Google Scholar

[4] A. Vert, S. Soloviev, P. Sandvik: Ph. Stat. Solidi (A) App. and Mat., Vol. 206, N. 10 (2009), p.2468.

Google Scholar

[5] Williams Advanced Materials, Inc. Westford, MA 01886 USA.

Google Scholar