SiC Zener Diode for Gate Protection of 4.5 kV SiCGT

Koji Nakayama; Ryosuke Ishii; Katsunori Asano; Tetsuya Miyazawa; Hidekazu Tsuchida

doi:10.4028/www.scientific.net/MSF.679-680.559

Paper Titles

Advances in Silicon Carbide Single Photon Detectors
p.543

Effect of Proton Irradiation Induced Defects on 4H-SiC Schottky Diode X-Ray Detectors
p.547

Proton Irradiation of 4H-SiC Ultraviolet Single Photon Avalanche Diodes
p.551

3.3 kV Rated Silicon Carbide Schottky Diodes with Epitaxial Field Stop Ring
p.555

SiC Zener Diode for Gate Protection of 4.5 kV SiCGT
p.559

Optical and Electrical Simulation of 4H-SiC UV Photodetector by Finite Element Method
p.563

Avalanche Diodes with Low Temperature Dependence in 4H-SiC Suitable for Parallel Protection
p.567

Thermally-Assisted Tunneling Model for 3C-SiC p⁺-n Diodes
p.571

4H-SiC Schottky Diodes for Temperature Sensing Applications in Harsh Environments
p.575

HomeMaterials Science ForumMaterials Science Forum Vols. 679-680SiC Zener Diode for Gate Protection of 4.5 kV...

SiC Zener Diode for Gate Protection of 4.5 kV SiCGT

Abstract:

Zener voltages of the fabricated SiC Zener diodes with various nitrogen concentrations in the range from 7×1017 to 5×1019 cm-3 are 17 to 87 V, and decreased with an increase in the nitrogen concentration. Furthermore, in a chopper circuit using SiC Zener diodes for SiCGT gate protection, the commutated current decreases slowly even though cathode current falls rapidly, and the SiCGT gate is protected from surge voltage by SiC Zener diode. Moreover, the value of Zener voltage after the operation was the same as that before half bridge operation at 47 V.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2010

View Preview

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Pages:

559-562

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.679-680.559

Citation:

Cite this paper

Online since:

March 2011

Authors:

Koji Nakayama, Ryosuke Ishii, Katsunori Asano, Tetsuya Miyazawa, Hidekazu Tsuchida

Keywords:

4H-SiC, Chopper, Half-Bridge, SICGT, Surge, Zener Diode

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] Y. Sugawara, D. Takayama, K. Asano, A. Agarwal, S. Ryu, J. Palmour and S. Ogata: Proceedings of 2004 ISPSD (2004), pp.365-368.

Google Scholar

[2] R. Ishi, H. Tsuchida, K. Nakayama and Y. Sugawara: Proc. of 19th ISPSD (2007), pp.277-280.

Google Scholar

[3] R. Ishi, H. Tsuchida, K. Nakayama and Y. Sugawara: Mater. Sci. Forum, Vols. 600-603 (2009), pp.1015-1018.

Google Scholar

[4] Y. Sugawara, K. Asano, R. Singh and J. W. Palmour: Mater. Sci. Forum, Vols. 338-342 (2000), pp.1317-1320.

Google Scholar

[5] H. Tsuchida, I. Kamata, T. Jikimoto and K. Izumi: J. Crystal Growth, Vols. 237-239, Part 2 (2002), pp.1206-1212.

DOI: 10.1016/s0022-0248(01)02173-x

Google Scholar

[6] Y. Sugawara, Y. Miyanagi, K. Asano, A. Agarwal, S. Ryu, J. Palmour, Y. Shouji, S. Ogata and T. Izumi: Proceedings of 18th ISPSD (2006), pp.117-120.

Google Scholar

[7] Y. Sugawara, D. Takayama, K. Asano, A. Agarwal, S. Ryu, J. Palmour and S. Ogata: Proceedings of 2004 ISPSD (2004), pp.365-368.

Google Scholar

[8] S. M. Sze, in: Physics of semiconductor Devices, John Wiley & Sons, Inc. (1981).

Google Scholar