Paper Title:
SiC Zener Diode for Gate Protection of 4.5 kV SiCGT
  Abstract

Zener voltages of the fabricated SiC Zener diodes with various nitrogen concentrations in the range from 7×1017 to 5×1019 cm-3 are 17 to 87 V, and decreased with an increase in the nitrogen concentration. Furthermore, in a chopper circuit using SiC Zener diodes for SiCGT gate protection, the commutated current decreases slowly even though cathode current falls rapidly, and the SiCGT gate is protected from surge voltage by SiC Zener diode. Moreover, the value of Zener voltage after the operation was the same as that before half bridge operation at 47 V.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
559-562
DOI
10.4028/www.scientific.net/MSF.679-680.559
Citation
K. Nakayama, R. Ishii, K. Asano, T. Miyazawa, H. Tsuchida, "SiC Zener Diode for Gate Protection of 4.5 kV SiCGT", Materials Science Forum, Vols. 679-680, pp. 559-562, 2011
Online since
March 2011
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Price
$35.00
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