Silicon Carbide and Related Materials 2010

Volumes 679-680

doi: 10.4028/

Paper Title Page

Authors: Petre Alexandrov, Xue Qing Li, Jian H. Zhao

Abstract: An optically controlled power switch based on 4H-SiC Trenched and Implanted Vertical JFETs (TIVJFET) was developed that comprises three...

Authors: Niclas Ejebjörk, Herbert Zirath, Peder Bergman, Björn Magnusson, Niklas Rorsman

Abstract: SiC MESFETs were scaled both laterally and vertically to optimize high frequency and high power performance. Two types of epi-stacks of SiC...

Authors: Brett A. Hull, Sei Hyung Ryu, Q. Jon Zhang, Charlotte Jonas, Michael J. O'Loughlin, Robert Callanan, John W. Palmour

Abstract: DMOSFETs fabricated in 4H-SiC with capabilities for blocking in excess of 1700V and conducting 20A continuous current in the on-state are...

Authors: Zachary Stum, A.V. Bolotnikov, Peter A. Losee, Kevin Matocha, Steve Arthur, Jeff Nasadoski, R. Ramakrishna Rao, O.S. Saadeh, Ljubisa Stevanovic, Rachael L. Myers-Ward, Charles R. Eddy, D. Kurt Gaskill

Abstract: Doubly-implanted SiC vertical MOSFETs were fabricated displaying a blocking voltage of 4.2kV and a specific on-resistance of 23 mΩ-cm2, on a...

Authors: Jeff B. Casady, David C. Sheridan, Robin L. Kelley, Volodymyr Bondarenko, Andrew Ritenour

Abstract: Equivalent sized (4.5 mm2 die area), 1200 V, 4H-SiC, vertical trench Junction Field Effect Transistors (JFETs) were characterized in terms...

Authors: Motoki Kobayashi, Hidetsugu Uchida, Akiyuki Minami, Toyokazu Sakata, Romain Esteve, Adolf Schöner

Abstract: 3C-SiC MOSFET with 200 cm2/Vs channel mobility was fabricated. High performance device processes were adopted, including room temperature...

Authors: Jang Kwon Lim, Georg Tolstoy, Dimosthenis Peftitsis, Jacek Rabkowski, Mietek Bakowski, Hans Peter Nee

Abstract: The 1.2 kV SiC JFET and BJT devices have been investigated and compared with respect to total losses including the gate driver losses in a...

Authors: Mitsuo Okamoto, Miwako Iijima, Tsutomu Yatsuo, Takahiro Nagano, Kenji Fukuda, Hajime Okumura

Abstract: We investigated the 4H-SiC C-face MOS interface properties around valence-band, and fabricated 4H-SiC C-face p-channel MOSFETs for the first...

Authors: Kevin M. Speer, Philip G. Neudeck, Mehran Mehregany

Abstract: We introduce the vacuum field-effect transistor (VacFET), the first SiC FET to use a vacuum-sealed cavity in place of the traditional, solid...

Authors: Akio Takatsuka, Yasunori Tanaka, Koji Yano, Tsutomu Yatsuo, Kazuo Arai

Abstract: In this work, we succeeded in developing high performance normally-off SiC buried gate static induction transistors (SiC-BGSITs). To achieve...


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