Silicon Carbide and Related Materials 2010

Volumes 679-680

doi: 10.4028/

Paper Title Page

Authors: David C. Sheridan, Andrew Ritenour, Volodymyr Bondarenko, Jeff B. Casady, Robin L. Kelley

Abstract: This work presents the progress in developing an all SiC based power module for use in high frequency and high efficiency applications....

Authors: Fanny Björk, Michael Treu, Jochen Hilsenbeck, M.A. Kutschak, Daniel Domes, Roland Rupp

Abstract: A 1200 V SiC JFET has been demonstrated to achieve ultra-low switching losses ten times lower than for industrial grade 1200V Si IGBT. The...

Authors: Victor Veliadis, Damian Urciuoli, H.C. Ha, Harold Hearne, Charles Scozzie

Abstract: Numerous high-voltage applications require symmetrical bi-directional power flow control and protection circuitry. While mechanical...

Authors: Harsh Naik, T. Paul Chow

Abstract: To study the mobility limiting mechanisms in (0001) 4H-SiC and 6H-SiC MOSFETs, physics based modeling of the inversion mobility of has been...

Authors: Aivars J. Lelis, Ronald Green, Daniel B. Habersat

Abstract: We have observed a significant increase in the instability of SiC power MOSFET ID-VGS characteristics following bias stressing at elevated...

Authors: Hiroshi Yano, Yuki Oshiro, Dai Okamoto, Tomoaki Hatayama, Takashi Fuyuki

Abstract: Instability of metal-oxide-semiconductor field-effect transistor (MOSFET) characteristics was evaluated by DC and pulse current-voltage...

Authors: Hiroshi Kono, Takuma Suzuki, Kazuto Takao, Masaru Furukawa, Makoto Mizukami, Chiharu Ota, Shinsuke Harada, Junji Senzaki, Kenji Fukuda, Takashi Shinohe

Abstract: 1.2 mm × 1.2 mm and 2.7 mm × 2.7 mm silicon carbide double-implanted metal-oxide-semiconductor field-effect transistors (DIMOSFETs) were...

Authors: Konstantinos Rogdakis, Edwige Bano, Laurent Montes, Mikhael Bechelany, David Cornu, Konstantinos Zekentes

Abstract: Back-gated field effect transistors (FETs) based on catalyst-free grown 3C-SiC nanowire (NW) were fabricated. Devices with rectifying Source...

Authors: Victor Veliadis, Eric J. Stewart, Harold Hearne, Ty McNutt, W. Chang, Megan Snook, Aivars J. Lelis, Charles Scozzie

Abstract: Normally-ON 9.1 kV (at 0.1 mA/cm2), 1.52 x 10-3 cm2 active-area vertical-channel SiC JFETs (VJFETs), were fabricated at a 52% yield with no...

Authors: Francesco Giuseppe Della Corte, Fortunato Pezzimenti, Salvatore Bellone, Roberta Nipoti

Abstract: A numerical simulation study focused on an oxide-free 4H-SiC power device that is based on a normally-off Bipolar Mode Field Effect...


Showing 141 to 150 of 200 Paper Titles