Silicon Carbide and Related Materials 2010

Volumes 679-680

doi: 10.4028/www.scientific.net/MSF.679-680

Paper Title Page

Authors: Yoshihiro Ueoka, Hiroshi Yano, Dai Okamoto, Tomoaki Hatayama, Takashi Fuyuki

Abstract: We investigated electrical properties of 4H-SiC trench metal-oxide-semiconductor field-effect transistors (MOSFETs) fabricated on (000_,1)...

666
Authors: Konstantin Vassilevski, Irina P. Nikitina, Alton B. Horsfall, Nicolas G. Wright, Andrew J. Smith, C. Mark Johnson

Abstract: Trenched implanted vertical JFETs (TI-VJFETs) with self-aligned gate and source contacts were fabricated on commercial 4H-SiC epitaxial...

670
Authors: Peter M. Gammon, Amador Pérez-Tomás, Michael R. Jennings, Owen J. Guy, N. Rimmer, J. Llobet, Narcis Mestres, Phillippe Godignon, Marcel Placidi, M. Zabala, James A. Covington, Philip A. Mawby

Abstract: In this paper, the integration of HfO2 onto SiC has been investigated via a number of different test structures. Capacitors consisting of...

674
Authors: Harsh Naik, T. Paul Chow

Abstract: The effect of using two different polytypes, 4H-SiC and 6H-SiC, on the performance of (0001) SiC MOSFETs has been studied. 4H-SiC and 6H-SiC...

678
Authors: Sigo Scharnholz, Bertrand Vergne, Jens Peter Konrath, Gontran Pâques, Volker Zorngiebel

Abstract: With a focus on pulsed power applications, this paper presents results of the pulse current characterization of GTO thyristors developed and...

682
Authors: Martin Domeij, Anders Lindgren, Carina Zaring, Andrei O. Konstantinov, Krister Gumaelius, Hakan Grenell, Imre Keri, Jan Olov Svedberg, Mats Reimark

Abstract: Vertical epitaxial NPN SiC BJTs for 1200 V rating were fabricated. Very low collector-emitter saturation voltages VCESAT=0.5 V at IC=6 A...

686
Authors: Nicolas Dheilly, Gontran Pâques, Dominique Planson, Pascal Bevilacqua, Sigo Scharnholz

Abstract: Direct light triggering of 4H-SiC thyristors with a 365 nm UV LED was demonstrated. Two different structures with etched and non etched gate...

690
Authors: Fujiwara Hirokazu, Masaki Konishi, T. Ohnishi, T. Nakamura, Kimimori Hamada, T. Katsuno, Y. Watanabe, Takeshi Endo, Takeo Yamamoto, K. Tsuruta, Shoichi Onda

Abstract: The impacts of threading dislocations, surface defects, donor concentration, and schottky Schottky barrier height on the reverse IV...

694
Authors: Hiroki Miyake, Tsunenobu Kimoto, Jun Suda

Abstract: We report the improvement of current gain in 4H-SiC bipolar junction transistors (BJTs) by using deposited oxides as a surface passivation...

698
Authors: Benedetto Buono, Reza Ghandi, Martin Domeij, Bengt Gunnar Malm, Carl Mikael Zetterling, Mikael Östling

Abstract: SiC BJTs are very attractive for high power application, but long term stability is still problematic and it could prohibit commercial...

702

Showing 161 to 170 of 200 Paper Titles