Silicon Carbide and Related Materials 2010

Volumes 679-680

doi: 10.4028/

Paper Title Page

Authors: Masaya Kimura, Masashi Kato, Masaya Ichimura

Abstract: Anodic oxidation was performed to 4H-SiC in order to suppress the negative impacts on the Schottky diode characteristics. The...

Authors: Satoshi Tanimoto, Masanori Miyabe, Takamitsu Shiiyama, Tatsuhiro Suzuki, Hiroshi Yamaguchi, Shinichi Nakashima, Hajime Okumura

Abstract: There is still little consensus regarding why low contact resistivity is achieved when Ni on n-type 4H- and 6H-SiC is annealed at...

Authors: Benjamin J.D. Furnival, Konstantin Vassilevski, Nicolas G. Wright, Alton B. Horsfall

Abstract: In this paper we demonstrate the recovery of Ohmic contacts formed on C-face 4H-SiC following high temperature post-processing. After a...

Authors: Gontran Pâques, Sigo Scharnholz, Jens Peter Konrath, Nicolas Dheilly, Dominique Planson, Rik W. De Doncker

Abstract: With the aim of investigating the specific process parameters of bipolar semiconductor devices, simple mesa-terminated silicon carbide PiN...

Authors: Mihai Lazar, Fabrice Enoch, Farah Laariedh, Dominique Planson, Pierre Brosselard

Abstract: The roughness of etched SiC surfaces must be minimized to obtain surfaces with a smooth aspect, avoiding micromasking artifacts originating...

Authors: Yasuhisa Sano, Takehiro Kato, Kohei Aida, Kazuya Yamamura, Hidekazu Mimura, Satoshi Matsuyama, Kazuto Yamauchi

Abstract: To reduce the on-resistance in vertical power transistors, backside thinning is required after device processing. However, it is difficult...

Authors: Hidenori Koketsu, Tomoaki Hatayama, Kento Amishima, Hiroshi Yano, Takashi Fuyuki

Abstract: The sloped sidewall angle in 4H-SiC mesa structure could be controlled by a thermal etching at 900oC in chlorine (Cl2) based ambience....

Authors: Shun Sadakuni, Ngo Xuan Dai, Yasuhisa Sano, Kenta Arima, Keita Yagi, Junji Murata, Takeshi Okamoto, Kazuma Tachibana, Kazuto Yamauchi

Abstract: We have developed a novel abrasive-free planarization method called catalyst-referred etching (CARE). A CARE-processed 8 deg off-axis 4H-SiC...

Authors: Takeshi Okamoto, Yasuhisa Sano, Kazuma Tachibana, Kenta Arima, Azusa N. Hattori, Keita Yagi, Junji Murata, Shun Sadakuni, Kazuto Yamauchi

Abstract: Catalyst-referred etching (CARE) is an abrasive-free planarization method. We used 3-inch and 2-inch 4H-SiC (0001) 4° off-axis substrates to...

Authors: Takuji Hosoi, Yusuke Kagei, Takashi Kirino, Shuhei Mitani, Yuki Nakano, Takashi Nakamura, Takayoshi Shimura, Heiji Watanabe

Abstract: Superior flatband voltage (Vfb) stability of SiC-based metal-insulator-semiconductor (MIS) devices with aluminum oxynitride (AlON) gate...


Showing 111 to 120 of 200 Paper Titles