Silicon Carbide and Related Materials 2010

Volumes 679-680

doi: 10.4028/www.scientific.net/MSF.679-680

Paper Title Page

Authors: Junji Senzaki, Atsushi Shimozato, Kazushige Koshikawa, Yasunori Tanaka, Kenji Fukuda, Hajime Okumura

Abstract: Photo emission phenomenon and reliability of thermal oxides grown on n-type 4H-SiC (0001) wafer have been investigated using photo emission...

378
Authors: Christian Strenger, Anton J. Bauer, Heiner Ryssel

Abstract: Metal-oxide-semiconductor (MOS) capacitors were formed on 4H-silicon carbide (SiC) using thermally grown silicon dioxide (SiO2) as gate...

382
Authors: Heiji Watanabe, Takashi Kirino, Yusuke Kagei, James Harries, Akitaka Yoshigoe, Yuden Teraoka, Shuhei Mitani, Yuki Nakano, Takashi Nakamura, Takuji Hosoi, Takayoshi Shimura

Abstract: The energy band structure of SiO2/4H-SiC fabricated on (0001) Si- and (000-1) C-face substrates was investigated by means of synchrotron...

386
Authors: Roberta Nipoti, Anindya Nath, Stefano Cristiani, Michele Sanmartin, Mulpuri V. Rao

Abstract: An inductively heated furnace and an ultra-fast microwave heating system have been used for performing post implantation annealing processes...

393
Authors: Raffaele Scaburri, Agostino Desalvo, Roberta Nipoti

Abstract: The simulation of the incomplete ionization of substitutional dopants in Silicon Carbide (SiC) is often performed using Boltzmann statistics...

397
Authors: Hassan Habib, Nicolas G. Wright, Alton B. Horsfall

Abstract: The variation in device process parameters is a core issue in the realisation of complex SiC logic for extreme environments. Factorial...

401
Authors: Kazuhiro Mochizuki, Natsuki Yokoyama

Abstract: A two-dimensional model of aluminum-ion implantation into 4H-SiC at moderate doses (1011 to 1013 cm-2) has been developed. The model is...

405
Authors: Pavel A. Ivanov, Oleg Korolkov, Tat'yana P. Samsonova, Natalja Sleptsuk, Alexander S. Potapov, Jana Toompuu, Toomas Rang

Abstract: In the present paper, 4H-SiC JBS diodes with "boron" p–n junctions have been investigated by means of deep-level transient spectroscopy...

409
Authors: Alessia Frazzetto, Fabrizio Roccaforte, Filippo Giannazzo, Raffaella Lo Nigro, Corrado Bongiorno, Salvatore Di Franco, Ming Hung Weng, Mario Saggio, Edoardo Zanetti, Vito Raineri

Abstract: This paper reports on the impact of the surface morphology on the properties of Ti/Al Ohmic contacts fabricated on Al-implanted 4H-SiC. In...

413
Authors: H. Schmitt, Volker Haeublein, Anton J. Bauer, Lothar Frey

Abstract: The impact of implantation temperature and dose as well as the annealing process with and without a graphite capping layer on surface...

417

Showing 91 to 100 of 200 Paper Titles