Silicon Carbide and Related Materials 2010

Volumes 679-680

doi: 10.4028/

Paper Title Page

Authors: Yong Zhao Yao, Yoshihiro Sugawara, Yukari Ishikawa, Hiroaki Saitoh, Katsunori Danno, Hiroshi Suzuki, Yoichiro Kawai, Noriyoshi Shibata

Abstract: Dislocations in highly doped n-type 4H-SiC (n+-SiC, n>1019 cm-3) substrate have been studied by means of electron beam induced current...

Authors: T. Katsuno, Y. Watanabe, Fujiwara Hirokazu, Masaki Konishi, Takeo Yamamoto, Takeshi Endo

Abstract: A new method for the separation of threading screw dislocations (TSD) and threading edge dislocations (TED) in a 4H-SiC epitaxial layer is...

Authors: Gan Feng, Jun Suda, Tsunenobu Kimoto

Abstract: Dislocations in 4H-SiC epilayers were imaged nondestructively by means of micro photoluminescence (-PL) mapping at room temperature. The...

Authors: Xuan Zhang, Masahiro Nagano, Hidekazu Tsuchida

Abstract: Interfacial dislocations are frequently observed to form during 4H-SiC epitaxy and thermal annealing. This report attempts to establish the...

Authors: Isaho Kamata, Xuan Zhang, Hidekazu Tsuchida

Abstract: Frank-type defects on the basal plane in thick 4H-SiC epitaxial layers converted from threading screw dislocation (TSD) have been...

Authors: Teddy Robert, Maya Marinova, Sandrine Juillaguet, Anne Henry, Efstathios K. Polychroniadis, Jean Camassel

Abstract: Both 3C and 6H stacking faults have been observed in a low doped 4H-SiC epitaxial layer grown in a hot-wall CVD reactor on a heavily doped...

Authors: Kevin Matocha, Vinayak Tilak

Abstract: The performance of 4H-SiC power MOSFETs is limited by the less than ideal electron inversion-layer mobility due to the poor quality of the...

Authors: Ioana Pintilie, Francesco Moscatelli, Roberta Nipoti, Antonella Poggi, Sandro Solmi, Lars S. Løvlie, Bengt Gunnar Svensson

Abstract: The effect of nitrogen (N) introduced by ion implantation at the SiO2/4H-SiC interface on the capacitance of the MOS capacitors is...

Authors: Tetsuo Hatakeyama, Hirofumi Matsuhata, T. Suzuki, Takashi Shinohe, Hajime Okumura

Abstract: SiO2/4H-SiC interfaces are examined by high-resolution transmission electron microscopy (HRTEM), high-angle annular dark-field scanning...

Authors: Pétur Gordon Hermannsson, Einar Ö. Sveinbjörnsson

Abstract: We report a strong reduction in the density of near-interface traps (NITs) at the SiO2/4H-SiC interface after dry oxidation in the presence...


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