Silicon Carbide and Related Materials 2010

Volumes 679-680

doi: 10.4028/www.scientific.net/MSF.679-680

Paper Title Page

Authors: Giovanni Alfieri, Tsunenobu Kimoto

Abstract: An isochronal annealing in the 100-1200 oC temperature range was carried out on 116 and 400 keV electron irradiated Al-doped 6H-SiC...

253
Authors: Lia Trapaidze, R. Hollweck, Svetlana Beljakowa, Bernd Zippelius, Heiko B. Weber, Gerhard Pensl, Michael Krieger

Abstract: Fe-implanted n-/p-type 4H-SiC samples were investigated by deep level transient spectroscopy (DLTS). In order to be able to separate...

257
Authors: Tamas Hornos, Adam Gali, Bengt Gunnar Svensson

Abstract: Large-scale and gap error free calculations of the electronic structure of vacancies in 4H-SiC have been carried out using a hybrid density...

261
Authors: Thanos Tsirimpis, S. Beljakova, Bernd Zippelius, Heiko B. Weber, Gerhard Pensl, Michael Krieger, Hiroyuki Nagasawa, Takamitsu Kawahara, Naoki Hatta, Kuniaki Yagi, Hidetsugu Uchida, Motoki Kobayashi, Adolf Schöner

Abstract: p-type 3C-SiC samples were implanted by iron (Fe) and investigated by means of deep level transient spectroscopy (DLTS). Corresponding argon...

265
Authors: Michael Dudley, Huan Huan Wang, Fang Zhen Wu, Sha Yan Byrapa, Balaji Raghothamachar, Gloria Choi, Edward K. Sanchez, Darren M. Hansen, Roman Drachev, Stephan G. Mueller, Mark J. Loboda

Abstract: Synchrotron White Beam X-ray Topography studies are presented of dislocation behavior and interactions in a new generation of seventy-six...

269
Authors: Jens Eriksson, Fabrizio Roccaforte, Ming Hung Weng, Filippo Giannazzo, Jean Lorenzzi, Vito Raineri

Abstract: Defects in cubic silicon carbide (3C-SiC) epilayers, that were grown using different techniques and on different substrates, were studied in...

273
Authors: Harald Karpinski, Sakwe Aloysius Sakwe, Michael Fried, Eberhard Bänsch, Peter J. Wellmann

Abstract: The determination of dislocation density and in particular the dislocation distribution in SiC wafers is of particular interest for SiC...

277
Authors: Hiroyuki Nagasawa, Takamitsu Kawahara, Kuniaki Yagi, Naoki Hatta

Abstract: To quantitatively evaluate the efficacy of stacking fault (SF) reduction methods, Monte Carlo simulations are carried out to reveal the SF...

282
Authors: Hitoshi Habuka, Kazuchika Furukawa, Keiko Tanaka, Yusuke Katsumi, Shinji Iizuka, Katsuya Fukae, Tomohisa Kato

Abstract: Selective etching on the surface of single-crystalline 4H-SiC was performed using ClF3 gas at 700 K and at atmospheric pressure in a cold...

286
Authors: Yong Zhao Yao, Yukari Ishikawa, Yoshihiro Sugawara, Hiroaki Saitoh, Katsunori Danno, Hiroshi Suzuki, Yoichiro Kawai, Noriyoshi Shibata

Abstract: We have proposed a new wet etching recipe using molten KOH and Na2O2 as the etchant (“KN etching”) for dislocation revelation in highly...

290

Showing 61 to 70 of 200 Paper Titles