Silicon Carbide and Related Materials 2010

Volumes 679-680

doi: 10.4028/

Paper Title Page

Authors: Gil Chung, Mark J. Loboda, Jie Zhang, Jian Wei Wan, E.P. Carlson, T.J. Toth, Robert E. Stahlbush, Marek Skowronski, R. Berechman, Siddarth G. Sundaresan, Ranbir Singh

Abstract: Improvements in the quality and consistency of 4H-SiC epitaxy wafers are now starting to enable growth of commercial SiC power device...

Authors: Philip Hens, J. Müller, L. Fahlbusch, E. Spiecker, Peter J. Wellmann

Abstract: A new type of void-like structure has been identified in thin 3C-SiC heteroepitaxial layers grown on silicon substrates. Similar surface...

Authors: Ruggero Anzalone, Massimo Camarda, Giuseppe D'Arrigo, Christopher Locke, Andrea Canino, Nicolò Piluso, Andrea Severino, Antonino La Magna, Stephen E. Saddow, Francesco La Via

Abstract: SiC is a candidate material for micro- and nano-electromechanical systems (MEMS and NEMS). The fabrication of SiC MEMS-based sensors...

Authors: Bernard Enrico Watts, Giovanni Attolini, Tullo Besagni, Matteo Bosi, Claudio Ferrari, Francesca Rossi, Ferenc Riesz, Liu Di Jiang

Abstract: To assess deformation issues in SiC/Si, different pre-growth procedures were investigated, involving the addition of SiH4 to C3H8 during the...

Authors: Nicolò Piluso, Massimo Camarda, Ruggero Anzalone, Andrea Severino, Antonino La Magna, Giuseppe D'Arrigo, Francesco La Via

Abstract: Raman microscopy has been used to study the stress distribution on 3C-SiC/Si(100) micro-machined free standing structures. Linear scans...

Authors: Yan Peng, Xian Gang Xu, Xiao Bo Hu, Xiu Fang Chen, Yu Qiang Gao

Abstract: Contactless resistivity mapping, scanning electron microscope (SEM) and confocal laser microscope have been used to study the relationship...

Authors: Nikoletta Jegenyes, Georgios Manolis, Jean Lorenzzi, Veronique Soulière, Deborah Dompoint, Alexandre Boulle, Gabriel Ferro, Kęstutis Jarašiūnas

Abstract: Free carrier absorption (FCA) and picosecond light-induced transient grating (LITG) techniques were applied to study the photoelectrical...

Authors: Patrik Ščajev, A. Mekys, P. Malinovskis, Jurgis Storasta, Masashi Kato, Kęstutis Jarašiūnas

Abstract: The electrical and optical techniques have been applied for investigation of carrier transport and recombination features in thick...

Authors: Georgios Manolis, Milena Beshkova, Mikael Syväjärvi, Rositza Yakimova, Kęstutis Jarašiūnas

Abstract: We investigated non-equilibrium carrier dynamics in ~20μm thick 3C-SiC layers, grown by sublimation epitaxy directly on 6H-SiC substrate or...

Authors: Maya Marinova, Alkyoni Mantzari, Jian Wu Sun, Jean Lorenzzi, Ariadne Andreadou, Georgios Zoulis, Sandrine Juillaguet, Gabriel Ferro, Jean Camassel, Efstathios K. Polychroniadis

Abstract: The current communication focuses on the investigation of 3C-SiC layers grown by the Vapour-Liquid-Solid mechanism on on-axis Si-face 6H-SiC...


Showing 31 to 40 of 200 Paper Titles