Carrier Dynamics in Hetero- and Homo-Epitaxially Sublimation Grown 3C-SiC Layers

Georgios Manolis; Milena Beshkova; Mikael Syväjärvi; Rositza Yakimova; Kęstutis Jarašiūnas

doi:10.4028/www.scientific.net/MSF.679-680.161

Paper Titles

Raman Stress Characterization of Hetero-Epitaxial 3C-SiC Free Standing Structures
p.141

A Comparative Study of the Morphologies of Etch Pits in Semi-Insulating Silicon Carbide Single Crystals
p.145

Nondestructive Evaluation of Photo-Electrical Properties of 3C-SiC (111) Homoepitaxial Layers Grown by CVD
p.153

Electrical Parameters of Bulk 3C-SiC Crystals Determined by Hall Effect, Magnetoresistivity, and Contactless Time-Resolved Optical Techniques
p.157

Carrier Dynamics in Hetero- and Homo-Epitaxially Sublimation Grown 3C-SiC Layers
p.161

Structural and Optical Investigation of VLS Grown (111) 3C-SiC Layers on 6H-SiC Substrates in Sn-Based Melts
p.165

Optical Investigation of Defect Filtering Effects in Bulk 3C-SiC Crystals Grown by the CF-PVT Method Using a Necking Technique
p.169

Examination of Two P-Type 4H SiC Samples Having Similar Resistivity but Very Different Radiation Damage and Annealing Characteristics
p.173

Uniformity of Properties of 4H-SiC CVD Films under Exposure to Radiation
p.177

HomeMaterials Science ForumMaterials Science Forum Vols. 679-680Carrier Dynamics in Hetero- and Homo-Epitaxially...

Carrier Dynamics in Hetero- and Homo-Epitaxially Sublimation Grown 3C-SiC Layers

Abstract:

We investigated non-equilibrium carrier dynamics in ~20μm thick 3C-SiC layers, grown by sublimation epitaxy directly on 6H-SiC substrate or buffered by a 3C seed layer. Differential transmission and light-induced transient grating techniques were applied to determine the ambipolar diffusion coefficient, carrier lifetime, and thermal activation energy of defects. The temperature dependences of ambipolar mobility and lifetime in 80-700 K range revealed the carrier scattering processes as well the impact of defects on the recombination rate, thus indicating slightly improved photoelectrical parameters of the homoepitaxially grown 3C layer. The determined thermal activation energies of 35 and 57 meV were attributed to the nitrogen impurity.

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Materials Science Forum (Volumes 679-680)

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161-164

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https://doi.org/10.4028/www.scientific.net/MSF.679-680.161

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March 2011

Authors:

Georgios Manolis, Milena Beshkova, Mikael Syväjärvi, Rositza Yakimova, Kęstutis Jarašiūnas

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3C-SiC, Carrier Mobility, Differential Transmission, Lifetime, Sublimation Epitaxy, Thermal Activation Energy, Transient Grating

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