Nondestructive Evaluation of Photo-Electrical Properties of 3C-SiC (111) Homoepitaxial Layers Grown by CVD

Nikoletta Jegenyes; Georgios Manolis; Jean Lorenzzi; Véronique Soulière; Deborah Dompoint; Alexandre Boulle; Gabriel Ferro; Kęstutis Jarašiūnas

doi:10.4028/www.scientific.net/MSF.679-680.153

Paper Titles

Advanced Stress Analysis by Micro-Structures Realization on High Quality Hetero-Epitaxial 3C-SiC for MEMS Application
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Evaluation of Curvature and Stress in 3C-SiC Grown on Differently Oriented Si Substrates
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Raman Stress Characterization of Hetero-Epitaxial 3C-SiC Free Standing Structures
p.141

A Comparative Study of the Morphologies of Etch Pits in Semi-Insulating Silicon Carbide Single Crystals
p.145

Nondestructive Evaluation of Photo-Electrical Properties of 3C-SiC (111) Homoepitaxial Layers Grown by CVD
p.153

Electrical Parameters of Bulk 3C-SiC Crystals Determined by Hall Effect, Magnetoresistivity, and Contactless Time-Resolved Optical Techniques
p.157

Carrier Dynamics in Hetero- and Homo-Epitaxially Sublimation Grown 3C-SiC Layers
p.161

Structural and Optical Investigation of VLS Grown (111) 3C-SiC Layers on 6H-SiC Substrates in Sn-Based Melts
p.165

Optical Investigation of Defect Filtering Effects in Bulk 3C-SiC Crystals Grown by the CF-PVT Method Using a Necking Technique
p.169

HomeMaterials Science ForumMaterials Science Forum Vols. 679-680Nondestructive Evaluation of Photo-Electrical...

Nondestructive Evaluation of Photo-Electrical Properties of 3C-SiC (111) Homoepitaxial Layers Grown by CVD

Abstract:

Free carrier absorption (FCA) and picosecond light-induced transient grating (LITG) techniques were applied to study the photoelectrical properties of 3C-SiC(111) homoepitaxial layers grown by CVD method on VLS (vapour-liquid-solid) grown seeds. The thickness of the CVD layers was ~10.5 µm with non-intentional type doping of n (~ 1017 cm-3) or p (<1015 cm-3). The carrier lifetime and the diffusion coefficient were measured as the function of the sample temperature, the injected excess carrier density at different growth parameters. At room temperature the ambipolar diffusion coefficient was Da=2.5-3 cm2/s, while the lifetime was in the range of 12-18 ns. The best structural and electrical properties were obtained for a CVD layer grown at high, 1600 °C temperature.

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Silicon Carbide and Related Materials 2010

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Materials Science Forum (Volumes 679-680)

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153-156

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https://doi.org/10.4028/www.scientific.net/MSF.679-680.153

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March 2011

Authors:

Nikoletta Jegenyes, Georgios Manolis, Jean Lorenzzi, Véronique Soulière, Deborah Dompoint, Alexandre Boulle, Gabriel Ferro, Kęstutis Jarašiūnas

Keywords:

3C-SiC, Bipolar Diffusion, Carrier Lifetime, Chemical Vapor Deposition (CVD), Free Carrier Absorption, Homoepitaxy, Light Induced Transient Grating Technique, Mobility

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