Nondestructive Evaluation of Photo-Electrical Properties of 3C-SiC (111) Homoepitaxial Layers Grown by CVD

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Free carrier absorption (FCA) and picosecond light-induced transient grating (LITG) techniques were applied to study the photoelectrical properties of 3C-SiC(111) homoepitaxial layers grown by CVD method on VLS (vapour-liquid-solid) grown seeds. The thickness of the CVD layers was ~10.5 µm with non-intentional type doping of n (~ 1017 cm-3) or p (<1015 cm-3). The carrier lifetime and the diffusion coefficient were measured as the function of the sample temperature, the injected excess carrier density at different growth parameters. At room temperature the ambipolar diffusion coefficient was Da=2.5-3 cm2/s, while the lifetime was in the range of 12-18 ns. The best structural and electrical properties were obtained for a CVD layer grown at high, 1600 °C temperature.

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

153-156

DOI:

10.4028/www.scientific.net/MSF.679-680.153

Citation:

N. Jegenyes et al., "Nondestructive Evaluation of Photo-Electrical Properties of 3C-SiC (111) Homoepitaxial Layers Grown by CVD", Materials Science Forum, Vols. 679-680, pp. 153-156, 2011

Online since:

March 2011

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$35.00

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