Electrical Parameters of Bulk 3C-SiC Crystals Determined by Hall Effect, Magnetoresistivity, and Contactless Time-Resolved Optical Techniques
The electrical and optical techniques have been applied for investigation of carrier transport and recombination features in thick free-standing 3C-SiC layers. Temperature dependencies of Hall mobility, magneto-resistivity, and conductivity indicated presence of high potential barriers, up to 0.4 eV. The carrier mobilities and equilibrium densities were calculated in the barrier and inter-barrier regions. Contactless measurements of the excess carrier ambipolar mobility and lifetime at 1016-18 cm-3 injection levels revealed carrier scattering solely by phonons in 80 – 800 K range. A correlation between the temperature dependencies of carrier lifetime and ambipolar mobility pointed out that diffusion-limited surface recombination at extended defects contributes significantly to the carrier lifetime.
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
P. Ščajev et al., "Electrical Parameters of Bulk 3C-SiC Crystals Determined by Hall Effect, Magnetoresistivity, and Contactless Time-Resolved Optical Techniques", Materials Science Forum, Vols. 679-680, pp. 157-160, 2011