Electrical Parameters of Bulk 3C-SiC Crystals Determined by Hall Effect, Magnetoresistivity, and Contactless Time-Resolved Optical Techniques

Abstract:

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The electrical and optical techniques have been applied for investigation of carrier transport and recombination features in thick free-standing 3C-SiC layers. Temperature dependencies of Hall mobility, magneto-resistivity, and conductivity indicated presence of high potential barriers, up to 0.4 eV. The carrier mobilities and equilibrium densities were calculated in the barrier and inter-barrier regions. Contactless measurements of the excess carrier ambipolar mobility and lifetime at 1016-18 cm-3 injection levels revealed carrier scattering solely by phonons in 80 – 800 K range. A correlation between the temperature dependencies of carrier lifetime and ambipolar mobility pointed out that diffusion-limited surface recombination at extended defects contributes significantly to the carrier lifetime.

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

157-160

DOI:

10.4028/www.scientific.net/MSF.679-680.157

Citation:

P. Ščajev et al., "Electrical Parameters of Bulk 3C-SiC Crystals Determined by Hall Effect, Magnetoresistivity, and Contactless Time-Resolved Optical Techniques", Materials Science Forum, Vols. 679-680, pp. 157-160, 2011

Online since:

March 2011

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$35.00

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