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HomeMaterials Science ForumMaterials Science Forum Vols. 679-680A Comparative Study of the Morphologies of Etch...

A Comparative Study of the Morphologies of Etch Pits in Semi-Insulating Silicon Carbide Single Crystals

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Abstract:

Contactless resistivity mapping, scanning electron microscope (SEM) and confocal laser microscope have been used to study the relationship of the resistivity and the etching behavior of the semi-insulating 6H-SiC wafer. Evidence is presented that the morphologies of the etch pits vary significantly with the impurity concentrations. The V impurity strongly affects the etch rates of edge, screw and mixed dislocations. For the dislocation containing the Burgers vector component of <0001>, its vertical etch rate is enhanced distinctly. In contrast, the horizontal etch rate becomes larger for the dislocation containing the Burgers vector component of < >. The shape of the etch pits reflects the Fermi level of the semi-insulating wafer and the net shallow impurity concentration.

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Silicon Carbide and Related Materials 2010

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Periodical:

Materials Science Forum (Volumes 679-680)

Pages:

145-152

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https://doi.org/10.4028/www.scientific.net/MSF.679-680.145

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Online since:

March 2011

Authors:

Yan Peng, Xian Gang Xu, Xiao Bo Hu, Xiu Fang Chen, Yu Qiang Gao

Keywords:

Contactless Resistivity Mapping, Etching Morphology, Semi-Insulating SiC Wafer

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© 2011 Trans Tech Publications Ltd. All Rights Reserved

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