A Comparative Study of the Morphologies of Etch Pits in Semi-Insulating Silicon Carbide Single Crystals

Abstract:

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Contactless resistivity mapping, scanning electron microscope (SEM) and confocal laser microscope have been used to study the relationship of the resistivity and the etching behavior of the semi-insulating 6H-SiC wafer. Evidence is presented that the morphologies of the etch pits vary significantly with the impurity concentrations. The V impurity strongly affects the etch rates of edge, screw and mixed dislocations. For the dislocation containing the Burgers vector component of <0001>, its vertical etch rate is enhanced distinctly. In contrast, the horizontal etch rate becomes larger for the dislocation containing the Burgers vector component of < >. The shape of the etch pits reflects the Fermi level of the semi-insulating wafer and the net shallow impurity concentration.

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

145-152

DOI:

10.4028/www.scientific.net/MSF.679-680.145

Citation:

Y. Peng et al., "A Comparative Study of the Morphologies of Etch Pits in Semi-Insulating Silicon Carbide Single Crystals", Materials Science Forum, Vols. 679-680, pp. 145-152, 2011

Online since:

March 2011

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$35.00

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