Generation of Void-Like Structures during Hot-Hydrogen Etching of Si Substrates for 3C-SiC Epitaxy

Philip Hens; J. Müller; L. Fahlbusch; E. Spiecker; Peter J. Wellmann

doi:10.4028/www.scientific.net/MSF.679-680.127

Paper Titles

Investigation of 3C-SiC Lateral Growth on 4H-SiC Mesas
p.111

High Growth Rate with Reduced Surface Roughness during On-Axis Homoepitaxial Growth of 4H-SiC
p.115

Growth of 4H- and 3C-SiC Epitaxial Layers on 4H-SiC Step-Free Mesas
p.119

4H-SiC Epitaxy with Very Smooth Surface and Low Basal Plane Dislocation on 4 Degree Off-Axis Wafer
p.123

Generation of Void-Like Structures during Hot-Hydrogen Etching of Si Substrates for 3C-SiC Epitaxy
p.127

Advanced Stress Analysis by Micro-Structures Realization on High Quality Hetero-Epitaxial 3C-SiC for MEMS Application
p.133

Evaluation of Curvature and Stress in 3C-SiC Grown on Differently Oriented Si Substrates
p.137

Raman Stress Characterization of Hetero-Epitaxial 3C-SiC Free Standing Structures
p.141

A Comparative Study of the Morphologies of Etch Pits in Semi-Insulating Silicon Carbide Single Crystals
p.145

HomeMaterials Science ForumMaterials Science Forum Vols. 679-680Generation of Void-Like Structures during...

Generation of Void-Like Structures during Hot-Hydrogen Etching of Si Substrates for 3C-SiC Epitaxy

Abstract:

A new type of void-like structure has been identified in thin 3C-SiC heteroepitaxial layers grown on silicon substrates. Similar surface structures can be found in micrographs published in the literature but have not been addressed so far. We propose a mechanism which explains the formation of these “type II voids” as result of hot-hydrogen etching. Type II voids seem to act as nucleation sites for the well-known faceted voids formed beneath the 3C-SiC layer during seeding (type I voids). Suppression of type II voids by appropriate high temperature cleaning steps therefore reduces the overall density of detrimental type I voids.