Generation of Void-Like Structures during Hot-Hydrogen Etching of Si Substrates for 3C-SiC Epitaxy

Abstract:

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A new type of void-like structure has been identified in thin 3C-SiC heteroepitaxial layers grown on silicon substrates. Similar surface structures can be found in micrographs published in the literature but have not been addressed so far. We propose a mechanism which explains the formation of these “type II voids” as result of hot-hydrogen etching. Type II voids seem to act as nucleation sites for the well-known faceted voids formed beneath the 3C-SiC layer during seeding (type I voids). Suppression of type II voids by appropriate high temperature cleaning steps therefore reduces the overall density of detrimental type I voids.

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

127-130

DOI:

10.4028/www.scientific.net/MSF.679-680.127

Citation:

P. Hens et al., "Generation of Void-Like Structures during Hot-Hydrogen Etching of Si Substrates for 3C-SiC Epitaxy", Materials Science Forum, Vols. 679-680, pp. 127-130, 2011

Online since:

March 2011

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Price:

$35.00

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