4H-SiC Epitaxy with Very Smooth Surface and Low Basal Plane Dislocation on 4 Degree Off-Axis Wafer

Abstract:

Article Preview

Improvements in the quality and consistency of 4H-SiC epitaxy wafers are now starting to enable growth of commercial SiC power device applications in areas such as inverters for photo-voltaic systems and power supplies. Recent work has achieved very low epitaxy surface roughness and very low BPD (Basal plane dislocation) in the on 4 degree off-axis substrates. In this paper, we report characterization of the very low BPD epitaxy wafers and a newly observed triangular defect.

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

123-126

DOI:

10.4028/www.scientific.net/MSF.679-680.123

Citation:

G. Chung et al., "4H-SiC Epitaxy with Very Smooth Surface and Low Basal Plane Dislocation on 4 Degree Off-Axis Wafer", Materials Science Forum, Vols. 679-680, pp. 123-126, 2011

Online since:

March 2011

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.