4H-SiC Epitaxy with Very Smooth Surface and Low Basal Plane Dislocation on 4 Degree Off-Axis Wafer

Gil Yong Chung; Mark J. Loboda; Jie Zhang; Jian Wei Wan; E.P. Carlson; T.J. Toth; Robert E. Stahlbush; Marek Skowronski; R. Berechman; Siddarth G. Sundaresan; Ranbir Singh

doi:10.4028/www.scientific.net/MSF.679-680.123

Paper Titles

Epitaxial Growth of 3C-SiC on Si Substrates by Atmospheric Hot Wall CVD Using Hexamethyledisilane[(CH₃)₆Si₂]
p.107

Investigation of 3C-SiC Lateral Growth on 4H-SiC Mesas
p.111

High Growth Rate with Reduced Surface Roughness during On-Axis Homoepitaxial Growth of 4H-SiC
p.115

Growth of 4H- and 3C-SiC Epitaxial Layers on 4H-SiC Step-Free Mesas
p.119

4H-SiC Epitaxy with Very Smooth Surface and Low Basal Plane Dislocation on 4 Degree Off-Axis Wafer
p.123

Generation of Void-Like Structures during Hot-Hydrogen Etching of Si Substrates for 3C-SiC Epitaxy
p.127

Advanced Stress Analysis by Micro-Structures Realization on High Quality Hetero-Epitaxial 3C-SiC for MEMS Application
p.133

Evaluation of Curvature and Stress in 3C-SiC Grown on Differently Oriented Si Substrates
p.137

Raman Stress Characterization of Hetero-Epitaxial 3C-SiC Free Standing Structures
p.141

HomeMaterials Science ForumMaterials Science Forum Vols. 679-6804H-SiC Epitaxy with Very Smooth Surface and Low...

4H-SiC Epitaxy with Very Smooth Surface and Low Basal Plane Dislocation on 4 Degree Off-Axis Wafer

Abstract:

Improvements in the quality and consistency of 4H-SiC epitaxy wafers are now starting to enable growth of commercial SiC power device applications in areas such as inverters for photo-voltaic systems and power supplies. Recent work has achieved very low epitaxy surface roughness and very low BPD (Basal plane dislocation) in the on 4 degree off-axis substrates. In this paper, we report characterization of the very low BPD epitaxy wafers and a newly observed triangular defect.

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Materials Science Forum (Volumes 679-680)

Pages:

123-126

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.679-680.123

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Online since:

March 2011

Authors:

Gil Yong Chung, Mark J. Loboda, Jie Zhang, Jian Wei Wan, E.P. Carlson, T.J. Toth, Robert E. Stahlbush, Marek Skowronski, R. Berechman, Siddarth G. Sundaresan, Ranbir Singh

Keywords:

4H-SiC, Epitaxy, Low BPD, Obtuse Triangular Defects, Smooth Surface

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