Examination of Two P-Type 4H SiC Samples Having Similar Resistivity but Very Different Radiation Damage and Annealing Characteristics

John W. Steeds

doi:10.4028/www.scientific.net/MSF.679-680.173

Paper Titles

Electrical Parameters of Bulk 3C-SiC Crystals Determined by Hall Effect, Magnetoresistivity, and Contactless Time-Resolved Optical Techniques
p.157

Carrier Dynamics in Hetero- and Homo-Epitaxially Sublimation Grown 3C-SiC Layers
p.161

Structural and Optical Investigation of VLS Grown (111) 3C-SiC Layers on 6H-SiC Substrates in Sn-Based Melts
p.165

Optical Investigation of Defect Filtering Effects in Bulk 3C-SiC Crystals Grown by the CF-PVT Method Using a Necking Technique
p.169

Examination of Two P-Type 4H SiC Samples Having Similar Resistivity but Very Different Radiation Damage and Annealing Characteristics
p.173

Uniformity of Properties of 4H-SiC CVD Films under Exposure to Radiation
p.177

Reduction in Majority-Carrier Concentration in Lightly-Doped 4H-SiC Epilayers by Electron Irradiation
p.181

Strain Measurements on Nitrogen Implanted 4H-SiC
p.185

On the Quantification of Al Incorporated in SiC Material Using Particle Induced X-Ray Emission Technique
p.189

HomeMaterials Science ForumMaterials Science Forum Vols. 679-680Examination of Two P-Type 4H SiC Samples Having...

Examination of Two P-Type 4H SiC Samples Having Similar Resistivity but Very Different Radiation Damage and Annealing Characteristics

Abstract:

In the course of studying by low temperature photoluminescence spectroscopy a wide range of electron-irradiated samples of p(Al)-type epitaxial layers of 4H SiC, from a variety of different sources of supply, the results were found to fit into two very different categories. The origin of these differences has been explored using a wide range of experimental techniques and found to result from the degree of compensation of the aluminium by nitrogen in the layers. Nitrogen concentrations deduced by SIMS experiments on these materials were found to be unreliable. The two different categories of material, called V and AB here, showed marked differences in their subsequent annealing behaviour and the implications of this distinction are discussed.

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Materials Science Forum (Volumes 679-680)

Pages:

173-176

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.679-680.173

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Online since:

March 2011

Authors:

John W. Steeds

Keywords:

4H-SiC, Annealing, Compensation, P(Al)-Type, PL, Radiation Damage, Resistivity, Variability SIMS

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References

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