Strain Measurements on Nitrogen Implanted 4H-SiC

Abstract:

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The evolution of the normal strain induced by nitrogen implantation in 4H-SiC was investigated through X-ray diffraction measurements and compared to previous studies on helium implanted SiC. The shape of the normal strain profile in the near surface region shows that the accumulation of point defects is not the only mechanism operative at room temperature. In the highly damaged region, the normal strain profile fits the N concentration.

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

185-188

DOI:

10.4028/www.scientific.net/MSF.679-680.185

Citation:

M. Amigou et al., "Strain Measurements on Nitrogen Implanted 4H-SiC", Materials Science Forum, Vols. 679-680, pp. 185-188, 2011

Online since:

March 2011

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Price:

$35.00

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