Strain Measurements on Nitrogen Implanted 4H-SiC

Matthieu Amigou; Marie France Beaufort; Alain Declémy; Stephanie Leclerc; Jean François Barbot

doi:10.4028/www.scientific.net/MSF.679-680.185

Paper Titles

Optical Investigation of Defect Filtering Effects in Bulk 3C-SiC Crystals Grown by the CF-PVT Method Using a Necking Technique
p.169

Examination of Two P-Type 4H SiC Samples Having Similar Resistivity but Very Different Radiation Damage and Annealing Characteristics
p.173

Uniformity of Properties of 4H-SiC CVD Films under Exposure to Radiation
p.177

Reduction in Majority-Carrier Concentration in Lightly-Doped 4H-SiC Epilayers by Electron Irradiation
p.181

Strain Measurements on Nitrogen Implanted 4H-SiC
p.185

On the Quantification of Al Incorporated in SiC Material Using Particle Induced X-Ray Emission Technique
p.189

Electrical Characterization of Nitrogen Implanted 3C-SiC by SSRM and CTLM Measurements
p.193

Evaluation of Long Carrier Lifetimes in Very Thick 4H-SiC Epilayers
p.197

Compensation-Dependent Carrier Transport of Al-Doped p-Type 4H-SiC
p.201

HomeMaterials Science ForumMaterials Science Forum Vols. 679-680Strain Measurements on Nitrogen Implanted 4H-SiC

Strain Measurements on Nitrogen Implanted 4H-SiC

Abstract:

The evolution of the normal strain induced by nitrogen implantation in 4H-SiC was investigated through X-ray diffraction measurements and compared to previous studies on helium implanted SiC. The shape of the normal strain profile in the near surface region shows that the accumulation of point defects is not the only mechanism operative at room temperature. In the highly damaged region, the normal strain profile fits the N concentration.

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Materials Science Forum (Volumes 679-680)

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185-188

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.679-680.185

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Online since:

March 2011

Authors:

Matthieu Amigou, Marie France Beaufort, Alain Declémy, Stephanie Leclerc, Jean François Barbot

Keywords:

Damage, Nitrogen Implantation, Normal Strain

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