Strain Measurements on Nitrogen Implanted 4H-SiC
The evolution of the normal strain induced by nitrogen implantation in 4H-SiC was investigated through X-ray diffraction measurements and compared to previous studies on helium implanted SiC. The shape of the normal strain profile in the near surface region shows that the accumulation of point defects is not the only mechanism operative at room temperature. In the highly damaged region, the normal strain profile fits the N concentration.
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
M. Amigou et al., "Strain Measurements on Nitrogen Implanted 4H-SiC", Materials Science Forum, Vols. 679-680, pp. 185-188, 2011