Compensation-Dependent Carrier Transport of Al-Doped p-Type 4H-SiC
The effects of compensation on the hole concentration and mobility in Al-doped 4H-SiC have been investigated by theoretical calculations using the parameters taken from our experimental results on the less-compensated epilayers. The hole concentrations, hole Hall mobilities and resistivities obtained by experiment and calculations are compared and discussed.
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
A. Koizumi et al., "Compensation-Dependent Carrier Transport of Al-Doped p-Type 4H-SiC", Materials Science Forum, Vols. 679-680, pp. 201-204, 2011