Compensation-Dependent Carrier Transport of Al-Doped p-Type 4H-SiC

Atsushi Koizumi; Naoya Iwamoto; Shinobu Onoda; Takeshi Ohshima; Tsunenobu Kimoto; Kazuo Uchida; Shinji Nozaki

doi:10.4028/www.scientific.net/MSF.679-680.201

Paper Titles

Strain Measurements on Nitrogen Implanted 4H-SiC
p.185

On the Quantification of Al Incorporated in SiC Material Using Particle Induced X-Ray Emission Technique
p.189

Electrical Characterization of Nitrogen Implanted 3C-SiC by SSRM and CTLM Measurements
p.193

Evaluation of Long Carrier Lifetimes in Very Thick 4H-SiC Epilayers
p.197

Compensation-Dependent Carrier Transport of Al-Doped p-Type 4H-SiC
p.201

Optically Detected Temperature Dependences of Carrier Lifetime and Diffusion Coefficient in 4H- and 3C-SiC
p.205

The Strong Field Transport in 4H- and 6H-SiC at Low Temperature
p.209

Complete Determination of the Local Stress Field in Epitaxial Thin Films Using Single Microstructure
p.213

Comparison between the Piezoresistive Properties of a-SiC Films Obtained by PECVD and Magnetron Sputtering
p.217

HomeMaterials Science ForumMaterials Science Forum Vols. 679-680Compensation-Dependent Carrier Transport of...

Compensation-Dependent Carrier Transport of Al-Doped p-Type 4H-SiC

Abstract:

The effects of compensation on the hole concentration and mobility in Al-doped 4H-SiC have been investigated by theoretical calculations using the parameters taken from our experimental results on the less-compensated epilayers. The hole concentrations, hole Hall mobilities and resistivities obtained by experiment and calculations are compared and discussed.

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Materials Science Forum (Volumes 679-680)

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201-204

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.679-680.201

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Online since:

March 2011

Authors:

Atsushi Koizumi, Naoya Iwamoto, Shinobu Onoda, Takeshi Ohshima, Tsunenobu Kimoto, Kazuo Uchida, Shinji Nozaki

Keywords:

4H-SiC, Al-Doping, Compensation, Conductivity, Mobility

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