Optically Detected Temperature Dependences of Carrier Lifetime and Diffusion Coefficient in 4H- and 3C-SiC

Abstract:

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Free carrier dynamics has been studied in 4H- and 3C-SiC in a wide temperature range using time-resolved photoluminescence, free carrier absorption, and light induced transient grating techniques. Considerably high carrier lifetime was observed in 3C-SiC epitaxial layers grown on 4H-SiC substrates using hot-wall CVD with respect to previously reported values for 3C-SiC grown either on Si or on 6H-SiC substrates. The temperature dependences of carrier lifetime and diffusion coefficient for 4H- and 3C-SiC were compared. Shorter photoluminescence decay time with respect to free carrier absorption decay time was observed in the same 4H-SiC sample, while these techniques revealed similar trends in the carrier lifetime temperature dependencies. However, the latter dependences for hot-wall CVD-grown 3C layers were found different if measured by time resolved photoluminescence and free carrier absorption techniques.

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

205-208

DOI:

10.4028/www.scientific.net/MSF.679-680.205

Citation:

J. ul Hassan et al., "Optically Detected Temperature Dependences of Carrier Lifetime and Diffusion Coefficient in 4H- and 3C-SiC", Materials Science Forum, Vols. 679-680, pp. 205-208, 2011

Online since:

March 2011

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Price:

$35.00

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