Evaluation of Long Carrier Lifetimes in Very Thick 4H-SiC Epilayers

Abstract:

We investigate the carrier lifetimes in very thick 4H-SiC epilayers (~250 μm) by means of time-resolved photoluminescence and microwave photoconductive decay. Both the minority carrier lifetime and the high injection lifetime are found to reach 18.5 μs by applying the carbon implantation/annealing method to the as-grown epilayers. We also study the epilayer thickness dependence of the carrier lifetime by successive experiments involving lifetime measurement and polishing. Based on the relationships between epilayer thickness and carrier lifetime, the bulk carrier lifetime and the hole diffusion constant are discussed.

• Periodical: Materials Science Forum (Volumes 679-680)
• Pages: 197-200
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.679-680.197
• Online since: March 2011
• Authors: Tetsuya Miyazawa, Masahiko Ito, Hidekazu Tsuchida
• Keywords: Carrier Lifetime, Diffusion Constant, Microwave Photoconductivity Decay, Point Defect, Time-Resolved Photoluminescence

References

[1] P. B. Klein, B. V. Shanabrook, S. W. Huh, A. Y. Polyakov, M. Skowronski, J. J. Sumakeris and M. J. O'Loughlin, Appl. Phys. Lett. 88, 052110 (2006).

DOI: 10.1063/1.2170144

[2] L. Storasta and H. Tsuchida, Appl. Phys. Lett. 90, 062116 (2007).

[3] L. Storasta, H. Tsuchida, T. Miyazawa and T. Ohshima, J. Appl. Phys. 103, 013705 (2008).

[4] T. Hiyoshi and T. Kimoto, Appl. Phys. Express 2, 041101 (2009).

[5] T. Hiyoshi and T. Kimoto, Appl. Phys. Express 2, 091101 (2009).

[6] S. G. Sridhara, R. P. Devaty and W. J. Choyke, J. Appl. Phys. 84, 2963 (1998).

[7] M. Ito, L. Storasta and H. Tsuchida, Appl. Phys. Express 1, 015001 (2008).

[8] P. B. Klein, J. Appl. Phys. 103, 033702 (2008).

[9] D. K. Schroder, Semiconductor Material and Device Characterization, 3rd ed. (Wiley, New Jersey, 2006), p.389.