Evaluation of Long Carrier Lifetimes in Very Thick 4H-SiC Epilayers

Abstract:

Article Preview

We investigate the carrier lifetimes in very thick 4H-SiC epilayers (~250 μm) by means of time-resolved photoluminescence and microwave photoconductive decay. Both the minority carrier lifetime and the high injection lifetime are found to reach 18.5 μs by applying the carbon implantation/annealing method to the as-grown epilayers. We also study the epilayer thickness dependence of the carrier lifetime by successive experiments involving lifetime measurement and polishing. Based on the relationships between epilayer thickness and carrier lifetime, the bulk carrier lifetime and the hole diffusion constant are discussed.

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

197-200

DOI:

10.4028/www.scientific.net/MSF.679-680.197

Citation:

T. Miyazawa et al., "Evaluation of Long Carrier Lifetimes in Very Thick 4H-SiC Epilayers", Materials Science Forum, Vols. 679-680, pp. 197-200, 2011

Online since:

March 2011

Export:

Price:

$35.00

In order to see related information, you need to Login.