Reduction in Majority-Carrier Concentration in Lightly-Doped 4H-SiC Epilayers by Electron Irradiation

Hideharu Matsuura; Hideki Yanagisawa; Kozo Nishino; Takunori Nojiri; Shinobu Onoda; Takeshi Ohshima

doi:10.4028/www.scientific.net/MSF.679-680.181

Paper Titles

Structural and Optical Investigation of VLS Grown (111) 3C-SiC Layers on 6H-SiC Substrates in Sn-Based Melts
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Optical Investigation of Defect Filtering Effects in Bulk 3C-SiC Crystals Grown by the CF-PVT Method Using a Necking Technique
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Examination of Two P-Type 4H SiC Samples Having Similar Resistivity but Very Different Radiation Damage and Annealing Characteristics
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Uniformity of Properties of 4H-SiC CVD Films under Exposure to Radiation
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Reduction in Majority-Carrier Concentration in Lightly-Doped 4H-SiC Epilayers by Electron Irradiation
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Strain Measurements on Nitrogen Implanted 4H-SiC
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On the Quantification of Al Incorporated in SiC Material Using Particle Induced X-Ray Emission Technique
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Electrical Characterization of Nitrogen Implanted 3C-SiC by SSRM and CTLM Measurements
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Evaluation of Long Carrier Lifetimes in Very Thick 4H-SiC Epilayers
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HomeMaterials Science ForumMaterials Science Forum Vols. 679-680Reduction in Majority-Carrier Concentration in...

Reduction in Majority-Carrier Concentration in Lightly-Doped 4H-SiC Epilayers by Electron Irradiation

Abstract:

The mechanisms for the reduction in the hole concentration in lightly Al-doped p-type 4H-SiC epilayers by electron irradiation as well as in the electron concentration in lightly N-doped n-type 4H-SiC epilayers by electron irradiation are investigated. In the p-type 4H-SiC epilayers, the temperature dependence of the hole concentration, , is not changed by 100 keV electron irradiation, while the is decreased by 150 keV electron irradiation. The density of Al acceptors with energy level eV decreases with increasing fluence of 150 keV electrons, whereas the density of deep acceptors with energy level eV increases. In the n-type 4H-SiC epilayers, the temperature dependence of the electron concentration, , is decreased by 200 keV electron irradiation. The density of N donors located at hexagonal C-sublattice sites decreases significantly with increasing fluence of 200 keV electrons, whereas the density of N donors located at cubic C-sublattice site decreases slightly.

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Periodical:

Materials Science Forum (Volumes 679-680)

Pages:

181-184

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.679-680.181

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Online since:

March 2011

Authors:

Hideharu Matsuura, Hideki Yanagisawa, Kozo Nishino, Takunori Nojiri, Shinobu Onoda, Takeshi Ohshima

Keywords:

Al-Doped 4H-SiC, Electron Irradiation, N-Doped 4H-SiC, Radiation Damage, Reduction of Acceptor Densities, Reduction of Donor Densities

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References

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