Uniformity of Properties of 4H-SiC CVD Films under Exposure to Radiation

Abstract:

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Non-uniformities of electrical properties of 4H-SiC CVD films have been revealed using physico-chemical reactions occurring upon introduction of radiation-induced structural defects. Primary knocked-out atoms and vacancies actively interact with defects of the starting material and thereby form the final system of radiation centers. The samples were irradiated with 900 keV electrons and 8 MeV protons at doses not leading to conductivity compensation ( 7.5  1012 cm–2) and a dose of 6  1014 cm–2 causing deep compensation. Capacitance methods demonstrated that characteristics of samples ~3 mm in size are not identical. The nuclear spectrometry technique, which enables microprobing of samples, demonstrated individual behavior of separate parts of a film with areas of tens of square micrometers (the dimension of α-particles track cross-section).

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

177-180

DOI:

10.4028/www.scientific.net/MSF.679-680.177

Citation:

A. M. Ivanov et al., "Uniformity of Properties of 4H-SiC CVD Films under Exposure to Radiation", Materials Science Forum, Vols. 679-680, pp. 177-180, 2011

Online since:

March 2011

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Price:

$35.00

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