Uniformity of Properties of 4H-SiC CVD Films under Exposure to Radiation

Alexander M. Ivanov; Nikita B. Strokan; N.A. Scherbov; Alexander A. Lebedev

doi:10.4028/www.scientific.net/MSF.679-680.177

Paper Titles

Carrier Dynamics in Hetero- and Homo-Epitaxially Sublimation Grown 3C-SiC Layers
p.161

Structural and Optical Investigation of VLS Grown (111) 3C-SiC Layers on 6H-SiC Substrates in Sn-Based Melts
p.165

Optical Investigation of Defect Filtering Effects in Bulk 3C-SiC Crystals Grown by the CF-PVT Method Using a Necking Technique
p.169

Examination of Two P-Type 4H SiC Samples Having Similar Resistivity but Very Different Radiation Damage and Annealing Characteristics
p.173

Uniformity of Properties of 4H-SiC CVD Films under Exposure to Radiation
p.177

Reduction in Majority-Carrier Concentration in Lightly-Doped 4H-SiC Epilayers by Electron Irradiation
p.181

Strain Measurements on Nitrogen Implanted 4H-SiC
p.185

On the Quantification of Al Incorporated in SiC Material Using Particle Induced X-Ray Emission Technique
p.189

Electrical Characterization of Nitrogen Implanted 3C-SiC by SSRM and CTLM Measurements
p.193

HomeMaterials Science ForumMaterials Science Forum Vols. 679-680Uniformity of Properties of 4H-SiC CVD Films under...

Uniformity of Properties of 4H-SiC CVD Films under Exposure to Radiation

Abstract:

Non-uniformities of electrical properties of 4H-SiC CVD films have been revealed using physico-chemical reactions occurring upon introduction of radiation-induced structural defects. Primary knocked-out atoms and vacancies actively interact with defects of the starting material and thereby form the final system of radiation centers. The samples were irradiated with 900 keV electrons and 8 MeV protons at doses not leading to conductivity compensation ( 7.5  1012 cm–2) and a dose of 6  1014 cm–2 causing deep compensation. Capacitance methods demonstrated that characteristics of samples ~3 mm in size are not identical. The nuclear spectrometry technique, which enables microprobing of samples, demonstrated individual behavior of separate parts of a film with areas of tens of square micrometers (the dimension of α-particles track cross-section).

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Periodical:

Materials Science Forum (Volumes 679-680)

Pages:

177-180

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.679-680.177

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Online since:

March 2011

Authors:

Alexander M. Ivanov, Nikita B. Strokan, N.A. Scherbov, Alexander A. Lebedev

Keywords:

Nuclear Detector, Proton Irradiation, Radiation Defect, Uniformity Intrinsic Defects

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References

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