Silicon Carbide and Related Materials 2010

Volumes 679-680

doi: 10.4028/www.scientific.net/MSF.679-680

Paper Title Page

Authors: Georgios Zoulis, Jian Wu Sun, Irina G. Galben-Sandulache, Guoli L. Sun, Sandrine Juillaguet, Thierry Ouisse, Didier Chaussende, Roland Madar, Jean Camassel

Abstract: We present the results of an optical investigation performed using low temperature photomuminescence and Raman spectroscopy on bulk 3C-SiC...

169
Authors: John W. Steeds

Abstract: In the course of studying by low temperature photoluminescence spectroscopy a wide range of electron-irradiated samples of p(Al)-type...

173
Authors: Alexander M. Ivanov, Nikita B. Strokan, N.A. Scherbov, Alexander A. Lebedev

Abstract: Non-uniformities of electrical properties of 4H-SiC CVD films have been revealed using physico-chemical reactions occurring upon...

177
Authors: Hideharu Matsuura, Hideki Yanagisawa, Kozo Nishino, Takunori Nojiri, Shinobu Onoda, Takeshi Ohshima

Abstract: The mechanisms for the reduction in the hole concentration in lightly Al-doped p-type 4H-SiC epilayers by electron irradiation as well as in...

181
Authors: Matthieu Amigou, Marie France Beaufort, Alain Declémy, Stephanie Leclerc, Jean François Barbot

Abstract: The evolution of the normal strain induced by nitrogen implantation in 4H-SiC was investigated through X-ray diffraction measurements and...

185
Authors: Maher Soueidan, Bilal Nsouli, Gabriel Ferro, Ghassan Younes

Abstract: In this work the capability of the proton induced X-ray emission (PIXE) technique to monitor a rapid, non-destructive and accurate...

189
Authors: Xi Song, Anne Elisabeth Bazin, Jean François Michaud, Frédéric Cayrel, Marcin Zielinski, Marc Portail, Thierry Chassagne, Emmanuel Collard, Daniel Alquier

Abstract: Two electrical characterization methods were used to study 3C-SiC epilayers doped by nitrogen implantation: circular Transfer Length Method...

193
Authors: Tetsuya Miyazawa, Masahiko Ito, Hidekazu Tsuchida

Abstract: We investigate the carrier lifetimes in very thick 4H-SiC epilayers (~250 μm) by means of time-resolved photoluminescence and microwave...

197
Authors: Atsushi Koizumi, Naoya Iwamoto, Shinobu Onoda, Takeshi Ohshima, Tsunenobu Kimoto, Kazuo Uchida, Shinji Nozaki

Abstract: The effects of compensation on the hole concentration and mobility in Al-doped 4H-SiC have been investigated by theoretical calculations...

201
Authors: Jawad ul Hassan, Patrik Ščajev, Kęstutis Jarašiūnas, Peder Bergman

Abstract: Free carrier dynamics has been studied in 4H- and 3C-SiC in a wide temperature range using time-resolved photoluminescence, free carrier...

205

Showing 41 to 50 of 200 Paper Titles