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Paper Titles
Structural Investigations of a Sputtered Intermediate Carbonization Layer for 3C-SiC on (111) and (110) Si Substrates
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Atomistic Simulation of SiC Growth at the SiC(0001)/Si1-XCx Interface by the Monte Carlo Method
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Polarity Control of CVD Grown 3C-SiC on Si(111)
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Epitaxial Growth on 4H-SiC on-Axis, 0.5°, 1.25°, 2°, 4°, 8° Off-Axis Substrates – Defects Analysis and Reduction
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Investigation of the Growth of 3C-SiC on Si by Vapor-Liquid-Solid ( VLS ) Transport
p.99
Geometrical Control of 3C and 6H-SiC Nucleation on Low Off-Axis Substrates
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Epitaxial Growth of 3C-SiC on Si Substrates by Atmospheric Hot Wall CVD Using Hexamethyledisilane[(CH3)6Si2]
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Investigation of 3C-SiC Lateral Growth on 4H-SiC Mesas
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High Growth Rate with Reduced Surface Roughness during On-Axis Homoepitaxial Growth of 4H-SiC
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Investigation of the Growth of 3C-SiC on Si by Vapor-Liquid-Solid ( VLS ) Transport

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Abstract:

In this work, the growth by Vapour-Liquid-Solid (VLS) mechanism of 3C-SiC on silicon substrate is reported. Firstly, a germanium layer is deposited on the substrate. Then the temperature of the sample is increased above Ge melting point in order to form a SiGe liquid phase by reaction with the substrate. Upon reaching the target temperature (1100-1300°C) the VLS growth starts with the injection of propane in the reactor. Both Raman spectrometry and X-Ray diffraction analyses evidenced the formation of 3C-SiC on every sample. However, this SiC deposit, a few micrometers thick, is always found to be polycrystalline though textured. In parallel, the presence of an epitaxial Si-Ge alloy, whose composition depends on the growth temperature, was systematically detected between Si and SiC.

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Periodical:

Materials Science Forum (Volumes 679-680)

Pages:

99-102

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.679-680.99

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Online since:

March 2011

Authors:

Stéphane Berckmans, Laurent Auvray, Gabriel Ferro, François Cauwet, Davy Carole, Véronique Soulière, Jean Claude Viala, Emmanuel Collard, Jean Baptiste Quoirin, Christian Brylinski

Keywords:

3C-SiC, SiGe, Silicon, VLS Transport

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© 2011 Trans Tech Publications Ltd. All Rights Reserved

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