Investigation of the Growth of 3C-SiC on Si by Vapor-Liquid-Solid ( VLS ) Transport

Abstract:

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In this work, the growth by Vapour-Liquid-Solid (VLS) mechanism of 3C-SiC on silicon substrate is reported. Firstly, a germanium layer is deposited on the substrate. Then the temperature of the sample is increased above Ge melting point in order to form a SiGe liquid phase by reaction with the substrate. Upon reaching the target temperature (1100-1300°C) the VLS growth starts with the injection of propane in the reactor. Both Raman spectrometry and X-Ray diffraction analyses evidenced the formation of 3C-SiC on every sample. However, this SiC deposit, a few micrometers thick, is always found to be polycrystalline though textured. In parallel, the presence of an epitaxial Si-Ge alloy, whose composition depends on the growth temperature, was systematically detected between Si and SiC.

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

99-102

DOI:

10.4028/www.scientific.net/MSF.679-680.99

Citation:

S. Berckmans et al., "Investigation of the Growth of 3C-SiC on Si by Vapor-Liquid-Solid ( VLS ) Transport", Materials Science Forum, Vols. 679-680, pp. 99-102, 2011

Online since:

March 2011

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Price:

$35.00

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