Investigation of the Growth of 3C-SiC on Si by Vapor-Liquid-Solid ( VLS ) Transport
In this work, the growth by Vapour-Liquid-Solid (VLS) mechanism of 3C-SiC on silicon substrate is reported. Firstly, a germanium layer is deposited on the substrate. Then the temperature of the sample is increased above Ge melting point in order to form a SiGe liquid phase by reaction with the substrate. Upon reaching the target temperature (1100-1300°C) the VLS growth starts with the injection of propane in the reactor. Both Raman spectrometry and X-Ray diffraction analyses evidenced the formation of 3C-SiC on every sample. However, this SiC deposit, a few micrometers thick, is always found to be polycrystalline though textured. In parallel, the presence of an epitaxial Si-Ge alloy, whose composition depends on the growth temperature, was systematically detected between Si and SiC.
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
S. Berckmans et al., "Investigation of the Growth of 3C-SiC on Si by Vapor-Liquid-Solid ( VLS ) Transport", Materials Science Forum, Vols. 679-680, pp. 99-102, 2011