Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Abstract: SiC 600 V Schottky barrier diodes (SBD) are already available in the market and 1.2 kV have been announced. As the highest market for power...
Abstract: Al2O3 grown by Atomic Layer Chemical Vapour Deposition (ALCVD) on n-type 4H-SiC
with a nominal thickness of 100nm has been characterized by...
Abstract: Silicon Carbide has proven its relevance for various MEMS and sensors devices
applications. This paper presents the fabrication and the...
Abstract: In this paper, we propose new designs of Schottky, JBS and PiN diodes, which process
technology is compatible with that of vertical power...
Abstract: Silicon-Carbide-based semiconductors offer realization of efficient high voltage components, with high switching speed and low conduction...
This paper has been added to your cart ($35.00)
You may also Subscribe for unlimited downloads of all papers and abstracts on www.scientific.net ($135.00 per month)
Scientific.Net is a registered brand of Trans Tech Publications Inc
© 2017 by Trans Tech Publications Inc. All Rights Reserved