Committees and Preface
Enlargement Growth of Large 4H-SiC Bulk Single Crystal
p.3
p.3
Reducing Stacking Faults in Highly Doped N-Type 4H-SiC Crystal
p.8
p.8
On Application of Sublimation Epitaxy to Growth of Bulk 3C-SiC Crystals
p.12
p.12
Experimental Verification of a Novel System for the Growth of SiC Single Crystals
p.16
p.16
Quality Investigation of 3C-SiC Crystals Grown by CF-PVT Technique
p.20
p.20
Polytype Stability of 4H-SiC Seed Crystal on Solution Growth
p.24
p.24
Defect Evaluation of SiC Crystal Grown by Solution Method: The Study by Synchrotron X-Ray Topography and Etching Method
p.28
p.28
Effect of Low Frequency Magnetic Field on SiC Solution Growth
p.32
p.32
Committees and Preface
Abstract:
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Info:
Periodical:
Materials Science Forum (Volumes 679-680)
Online since:
March 2011
Сopyright:
© 2011 Trans Tech Publications Ltd. All Rights Reserved
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