Defect Evaluation of SiC Crystal Grown by Solution Method: The Study by Synchrotron X-Ray Topography and Etching Method

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Abstract:

We investigated dislocation behavior in the crystal grown on 6H-SiC (0001) by solution method using synchrotron X-ray topography and thermal chlorine etching. It was confirmed that basal plane dislocation was not newly formed in the grown layer. In addition, the positions of threading screw dislocations (TSDs) were displaced and some of them disappeared in the grown layer. This displacement was caused by the bending of the TSDs during growth.

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Materials Science Forum (Volumes 679-680)

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28-31

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March 2011

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© 2011 Trans Tech Publications Ltd. All Rights Reserved

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