The Effect of Process Parameters on 4H-SiC Single Crystal Grown by a PVT Method

Abstract:

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Extensive study of various process parameters to influence on the growth of 4H-SiC crystal has been carried out using the transformation of the 6H-SiC seed by a PVT method. The axial temperature gradients were increased throughout increasing the crucible length along growth direction in order to enhance the growth rate and transformed crystal yield. The N2/Ar gas ratio used during the crystal growth related with carrier concentration/mobility of grown crystal. In the initial stage of growth, foreign polytypes such as 6H/15R were observed on 6H-SiC seed crystal but 4H crystals were entirely grown after the process optimization. While the typical absorption spectrum of SiC seed crystal indicated that the SiC polytype was the 6H-SiC with fundamental absorption energy of about 3.02eV, absorption spectrum of grown SiC crystal exhibited 4H-SiC with fundamental absorption energy of about 3.26eV. The entirely transformed SiC region exhibited lower micropipe density than 6H/4H transition region.

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

40-43

DOI:

10.4028/www.scientific.net/MSF.679-680.40

Citation:

I. G. Yeo et al., "The Effect of Process Parameters on 4H-SiC Single Crystal Grown by a PVT Method", Materials Science Forum, Vols. 679-680, pp. 40-43, 2011

Online since:

March 2011

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Price:

$35.00

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