Chloride-Based CVD at High Rates of 4H-SiC on On-Axis Si-Face Substrates

Stefano Leone; Yuan Chih Lin; Franziska Christine Beyer; Sven Andersson; Henrik Pedersen; Olof Kordina; Anne Henry; Erik Janzén

doi:10.4028/www.scientific.net/MSF.679-680.59

Paper Titles

The Effect of Process Parameters on 4H-SiC Single Crystal Grown by a PVT Method
p.40

Effect of the Seed Polarity for High Quality 4H-SiC Crystal Grown on 6H-SiC Seed by PVT Method
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Evolution of Extended Defects during Epitaxial Growths: A Monte Carlo Study
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4H-SiC Homoepitaxial Growth on Substrates with Different Off-Cut Directions
p.55

Chloride-Based CVD at High Rates of 4H-SiC on On-Axis Si-Face Substrates
p.59

Effects of Nitrogen Doping on Basal Plane Dislocation Reduction in 8° Off-Cut 4H-SiC Epilayers
p.63

Reduction of the Surface Density of Single Shockley Faults by TCS Growth Process
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On the Mechanism of Twin Boundary Elimination in 3C-SiC(111) Heteroepitaxial Layers on α-SiC Substrates
p.71

Chloride Based CVD of 3C-SiC on (0001) α-SiC Substrates
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HomeMaterials Science ForumMaterials Science Forum Vols. 679-680Chloride-Based CVD at High Rates of 4H-SiC on...

Chloride-Based CVD at High Rates of 4H-SiC on On-Axis Si-Face Substrates

Abstract:

The epitaxial growth at 100 µm/h on on-axis 4H-SiC substrates is demonstrated in this study. Chloride-based CVD, which has been shown to be a reliable process to grow SiC epitaxial layers at rates above 100 µm/h on off-cut substrates, was combined with silane in-situ etching. A proper tuning of C/Si and Cl/Si ratios and the combination of different chlorinated precursors resulted in the homoepitaxial growth of 4H-SiC on Si-face substrates at high rates. Methyltrichlorosilane, added with silane, ethylene and hydrogen chloride were employed as precursors to perform epitaxial growths resulting in very low background doping concentration and high quality material, which could be employed for power devices structure on basal-plane-dislocation-free epitaxial layers.

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Materials Science Forum (Volumes 679-680)

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59-62

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.679-680.59

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Online since:

March 2011

Authors:

Stefano Leone, Yuan Chih Lin, Franziska Christine Beyer, Sven Andersson, Henrik Pedersen, Olof Kordina, Anne Henry, Erik Janzén

Keywords:

Chloride-Based CVD, Epitaxial Growth, High Growth Rate, On-Axis

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